JPS5768043A - Measuring method and device for characteristics of semiconductor wafer - Google Patents
Measuring method and device for characteristics of semiconductor waferInfo
- Publication number
- JPS5768043A JPS5768043A JP14290180A JP14290180A JPS5768043A JP S5768043 A JPS5768043 A JP S5768043A JP 14290180 A JP14290180 A JP 14290180A JP 14290180 A JP14290180 A JP 14290180A JP S5768043 A JPS5768043 A JP S5768043A
- Authority
- JP
- Japan
- Prior art keywords
- measuring
- wafer
- measured
- electrode
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Abstract
PURPOSE:To measure the accurate characteristic values of a semiconductor wafer by contacting two pairs of measuring circuits having stages of two pieces electrically insulating and two independent probes with an element to be measured of wafer, thereby removing the influence of the contact resistance. CONSTITUTION:A wafer 1 is placed on 2-terminal stage integral with semicircular metallic pieces 2A, 2B via an insulator 9. A probe contacted with the element 3 to be measured of a wafer 1 is connected, for example, at one side to a measuring terminal 7A as a measuring electrode 4A through a voltmeter 8 and is connected at the other side to a measuring terminal 7B as a power source electrode 4B through a power source 5 and an ammeter 6. In this manner the characteristics (Zener voltage Vz) when a reference current Iz is flowed between the electrode 4B and the stage 2B can be measured by the voltmeter 8. Thus, it can eliminate the influence of contacting resistors R1, R2 affecting when a pair of measuring circuits are merely used, and constantly stable measuring result can be accurately obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14290180A JPS5768043A (en) | 1980-10-15 | 1980-10-15 | Measuring method and device for characteristics of semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14290180A JPS5768043A (en) | 1980-10-15 | 1980-10-15 | Measuring method and device for characteristics of semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5768043A true JPS5768043A (en) | 1982-04-26 |
Family
ID=15326228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14290180A Pending JPS5768043A (en) | 1980-10-15 | 1980-10-15 | Measuring method and device for characteristics of semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5768043A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5034684A (en) * | 1988-10-24 | 1991-07-23 | Tokyo Electron Limited | Probe device and method of controlling the same |
-
1980
- 1980-10-15 JP JP14290180A patent/JPS5768043A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5034684A (en) * | 1988-10-24 | 1991-07-23 | Tokyo Electron Limited | Probe device and method of controlling the same |
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