JPS5758378A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5758378A
JPS5758378A JP13377780A JP13377780A JPS5758378A JP S5758378 A JPS5758378 A JP S5758378A JP 13377780 A JP13377780 A JP 13377780A JP 13377780 A JP13377780 A JP 13377780A JP S5758378 A JPS5758378 A JP S5758378A
Authority
JP
Japan
Prior art keywords
harmonic
converter
light emitting
emitting device
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13377780A
Other languages
Japanese (ja)
Inventor
Osamu Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13377780A priority Critical patent/JPS5758378A/en
Publication of JPS5758378A publication Critical patent/JPS5758378A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To obtain an nth multiple of a semiconductor laser device emitted frequency by a mthod wherin the laser device is provided with a converter wherein the emitted frequency is converted into an nth (n=2,3,4,...) harmonic. CONSTITUTION:A semiconductor laser element 21 is fixedly installed on a heat radiating metal block 22. A secondary converter SHG is composed of such a dielectric crystal as LiNbNO3, etc. Light generated in the laser element 21 is converted into a second harmonic wave in a device 23 and then goes not of a window 28. This is but an example and the employment of a proper harmonic converter element results in the output of a harmonic more than two times higher than the fundamental frequency.
JP13377780A 1980-09-26 1980-09-26 Semiconductor light emitting device Pending JPS5758378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13377780A JPS5758378A (en) 1980-09-26 1980-09-26 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13377780A JPS5758378A (en) 1980-09-26 1980-09-26 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5758378A true JPS5758378A (en) 1982-04-08

Family

ID=15112730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13377780A Pending JPS5758378A (en) 1980-09-26 1980-09-26 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5758378A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175587A (en) * 1984-09-20 1986-04-17 Mitsubishi Electric Corp Semiconductor laser device
FR2592238A1 (en) * 1985-12-19 1987-06-26 Spectra Physics SEMICONDUCTOR LASER PUMPED BY A LASER DIODE AND METHOD FOR REDUCING OR ELIMINATING NOISE IN THE LASER BEAM OF SUCH A LASER.
EP0343591A2 (en) * 1988-05-26 1989-11-29 Matsushita Electric Industrial Co., Ltd. Visible laser source
US5177752A (en) * 1989-06-30 1993-01-05 Matsushita Electric Industrial Co., Ltd. Optical pulse generator using gain-switched semiconductor laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142284A (en) * 1975-06-02 1976-12-07 Nec Corp Blue-light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142284A (en) * 1975-06-02 1976-12-07 Nec Corp Blue-light emitting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175587A (en) * 1984-09-20 1986-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPH0231869B2 (en) * 1984-09-20 1990-07-17 Mitsubishi Electric Corp
FR2592238A1 (en) * 1985-12-19 1987-06-26 Spectra Physics SEMICONDUCTOR LASER PUMPED BY A LASER DIODE AND METHOD FOR REDUCING OR ELIMINATING NOISE IN THE LASER BEAM OF SUCH A LASER.
EP0343591A2 (en) * 1988-05-26 1989-11-29 Matsushita Electric Industrial Co., Ltd. Visible laser source
US5177752A (en) * 1989-06-30 1993-01-05 Matsushita Electric Industrial Co., Ltd. Optical pulse generator using gain-switched semiconductor laser

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