JPS5758320A - Work mounting stage in plasma asher device - Google Patents
Work mounting stage in plasma asher deviceInfo
- Publication number
- JPS5758320A JPS5758320A JP13167380A JP13167380A JPS5758320A JP S5758320 A JPS5758320 A JP S5758320A JP 13167380 A JP13167380 A JP 13167380A JP 13167380 A JP13167380 A JP 13167380A JP S5758320 A JPS5758320 A JP S5758320A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- work
- periphery
- groove
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To completely remove the material deposited on the periphery of the lower surface of the work by constituting the stage so that the center of the lower surface of the work is supported, and a space is provided under the peripheral part of the work. CONSTITUTION:The stage 5 is of a disc shape, and a doughnut shaped groove 7 is concentrically provided in a work mount 6 on the upper surface thereof. The circumference of a circle is located in the middle between the inner circumferential fringe and the outer circumferential fringe of said groove, and diameter of said circle is coincided with that of a wafer 1 which is the work. Therefore, when the wafer 1 is mounted on the specified position of the stage 5, the outer periphery of the wafer 1 is located on the groove 7. When plasma treatment is applied, the plasma reaches not only the upper surface of the wafer but also the periphery of the lower surface of the wafer 1 through groove 7. Therefore, the resist which is attached to the periphery of the lower surface of the wafer 1 can be ashed and removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13167380A JPS5758320A (en) | 1980-09-24 | 1980-09-24 | Work mounting stage in plasma asher device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13167380A JPS5758320A (en) | 1980-09-24 | 1980-09-24 | Work mounting stage in plasma asher device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5758320A true JPS5758320A (en) | 1982-04-08 |
Family
ID=15063547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13167380A Pending JPS5758320A (en) | 1980-09-24 | 1980-09-24 | Work mounting stage in plasma asher device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5758320A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62116891U (en) * | 1986-01-17 | 1987-07-24 | ||
KR100384060B1 (en) * | 2000-12-04 | 2003-05-14 | 삼성전자주식회사 | chuck plate of ashing equipment for fabricating semiconductor device and chuck assembly having same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352057A (en) * | 1976-10-22 | 1978-05-12 | Toshiba Corp | Continous wafer molding unit |
JPS5555530A (en) * | 1978-10-18 | 1980-04-23 | Takuo Sugano | Electrode device for plasma processor |
-
1980
- 1980-09-24 JP JP13167380A patent/JPS5758320A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352057A (en) * | 1976-10-22 | 1978-05-12 | Toshiba Corp | Continous wafer molding unit |
JPS5555530A (en) * | 1978-10-18 | 1980-04-23 | Takuo Sugano | Electrode device for plasma processor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62116891U (en) * | 1986-01-17 | 1987-07-24 | ||
JPH0423029Y2 (en) * | 1986-01-17 | 1992-05-27 | ||
KR100384060B1 (en) * | 2000-12-04 | 2003-05-14 | 삼성전자주식회사 | chuck plate of ashing equipment for fabricating semiconductor device and chuck assembly having same |
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