JPS5754940B2 - - Google Patents

Info

Publication number
JPS5754940B2
JPS5754940B2 JP50030657A JP3065775A JPS5754940B2 JP S5754940 B2 JPS5754940 B2 JP S5754940B2 JP 50030657 A JP50030657 A JP 50030657A JP 3065775 A JP3065775 A JP 3065775A JP S5754940 B2 JPS5754940 B2 JP S5754940B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50030657A
Other languages
Japanese (ja)
Other versions
JPS50128480A (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50128480A publication Critical patent/JPS50128480A/ja
Publication of JPS5754940B2 publication Critical patent/JPS5754940B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/13Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP50030657A 1974-03-15 1975-03-13 Expired JPS5754940B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7403470,A NL180466C (nl) 1974-03-15 1974-03-15 Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam voorzien van een in het halfgeleiderlichaam verzonken patroon van isolerend materiaal.

Publications (2)

Publication Number Publication Date
JPS50128480A JPS50128480A (https=) 1975-10-09
JPS5754940B2 true JPS5754940B2 (https=) 1982-11-20

Family

ID=19820963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50030657A Expired JPS5754940B2 (https=) 1974-03-15 1975-03-13

Country Status (13)

Country Link
US (1) US3996077A (https=)
JP (1) JPS5754940B2 (https=)
AT (1) AT347501B (https=)
AU (1) AU498873B2 (https=)
BE (1) BE826722A (https=)
BR (1) BR7501440A (https=)
CH (1) CH588165A5 (https=)
DE (1) DE2510951C3 (https=)
FR (1) FR2264394B1 (https=)
GB (1) GB1495460A (https=)
IT (1) IT1034216B (https=)
NL (1) NL180466C (https=)
SE (1) SE402504B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598065B2 (ja) * 1976-01-30 1984-02-22 松下電子工業株式会社 Mos集積回路の製造方法
US4066473A (en) * 1976-07-15 1978-01-03 Fairchild Camera And Instrument Corporation Method of fabricating high-gain transistors
JPS6035818B2 (ja) * 1976-09-22 1985-08-16 日本電気株式会社 半導体装置の製造方法
DE2728845A1 (de) * 1977-06-27 1979-01-18 Siemens Ag Verfahren zum herstellen eines hochfrequenztransistors
NL7709363A (nl) * 1977-08-25 1979-02-27 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3640806A (en) * 1970-01-05 1972-02-08 Nippon Telegraph & Telephone Semiconductor device and method of producing the same
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3796613A (en) * 1971-06-18 1974-03-12 Ibm Method of forming dielectric isolation for high density pedestal semiconductor devices
US3873989A (en) * 1973-05-07 1975-03-25 Fairchild Camera Instr Co Double-diffused, lateral transistor structure

Also Published As

Publication number Publication date
BR7501440A (pt) 1975-12-09
SE402504B (sv) 1978-07-03
AU7915075A (en) 1976-09-23
SE7502781L (https=) 1975-09-16
ATA197775A (de) 1978-05-15
DE2510951B2 (de) 1979-07-05
AU498873B2 (en) 1979-03-29
US3996077A (en) 1976-12-07
CH588165A5 (https=) 1977-05-31
NL7403470A (nl) 1975-09-17
IT1034216B (it) 1979-09-10
AT347501B (de) 1978-12-27
FR2264394A1 (https=) 1975-10-10
GB1495460A (en) 1977-12-21
DE2510951A1 (de) 1975-09-25
NL180466B (nl) 1986-09-16
FR2264394B1 (https=) 1980-10-24
BE826722A (fr) 1975-09-15
NL180466C (nl) 1987-02-16
JPS50128480A (https=) 1975-10-09
DE2510951C3 (de) 1980-03-13

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