JPS575435A - Optoelectronic switching circuit - Google Patents
Optoelectronic switching circuitInfo
- Publication number
- JPS575435A JPS575435A JP7960780A JP7960780A JPS575435A JP S575435 A JPS575435 A JP S575435A JP 7960780 A JP7960780 A JP 7960780A JP 7960780 A JP7960780 A JP 7960780A JP S575435 A JPS575435 A JP S575435A
- Authority
- JP
- Japan
- Prior art keywords
- turned
- photodetectors
- bias voltage
- state
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
Landscapes
- Electronic Switches (AREA)
Abstract
PURPOSE:To make a titled circuit small in size and economical, by only one amplifier circuit without using a resistance network. CONSTITUTION:An input electric signal from each input terminal Ai produces optical signals 2 with an electrooptic conversion element connected to each terminal and the optical signals are received with photodetectors 3 opposing thereto. Only an electric signal from an input terminal A1 is turned on to be picked up from an output terminal B and electric signals from other input terminals are turned off. In such a state, a control signal P1 is turned on, and a bias voltage applied to the detectors 3 is reversed with a bias voltage switching circuit 4, control signals at other terminals are turned off and the bias voltage is Voff. Thus, photodetectors in off-state cause high resitance and act as load resistances for the photodetectors in on-state normally without shortening a load resistance 6 normally, allowing to make unnecessary a synthesizer with one amplifier 8 for signal amplification.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7960780A JPS575435A (en) | 1980-06-14 | 1980-06-14 | Optoelectronic switching circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7960780A JPS575435A (en) | 1980-06-14 | 1980-06-14 | Optoelectronic switching circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS575435A true JPS575435A (en) | 1982-01-12 |
Family
ID=13694698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7960780A Pending JPS575435A (en) | 1980-06-14 | 1980-06-14 | Optoelectronic switching circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS575435A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60150032U (en) * | 1984-03-15 | 1985-10-05 | パラマウント硝子工業株式会社 | insulation material |
-
1980
- 1980-06-14 JP JP7960780A patent/JPS575435A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60150032U (en) * | 1984-03-15 | 1985-10-05 | パラマウント硝子工業株式会社 | insulation material |
JPH0136598Y2 (en) * | 1984-03-15 | 1989-11-07 |
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