JPS5751276B2 - - Google Patents
Info
- Publication number
- JPS5751276B2 JPS5751276B2 JP48119221A JP11922173A JPS5751276B2 JP S5751276 B2 JPS5751276 B2 JP S5751276B2 JP 48119221 A JP48119221 A JP 48119221A JP 11922173 A JP11922173 A JP 11922173A JP S5751276 B2 JPS5751276 B2 JP S5751276B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/039—Displace P-N junction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48119221A JPS5751276B2 (US20020193084A1-20021219-M00002.png) | 1973-10-23 | 1973-10-23 | |
| US05/515,616 US3961996A (en) | 1973-10-23 | 1974-10-17 | Process of producing semiconductor laser device |
| DE2450162A DE2450162C3 (de) | 1973-10-23 | 1974-10-22 | Doppelheterostruktur-Laserdiode und Verfahren zur Herstellung derselben |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48119221A JPS5751276B2 (US20020193084A1-20021219-M00002.png) | 1973-10-23 | 1973-10-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5068786A JPS5068786A (US20020193084A1-20021219-M00002.png) | 1975-06-09 |
| JPS5751276B2 true JPS5751276B2 (US20020193084A1-20021219-M00002.png) | 1982-11-01 |
Family
ID=14755942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48119221A Expired JPS5751276B2 (US20020193084A1-20021219-M00002.png) | 1973-10-23 | 1973-10-23 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3961996A (US20020193084A1-20021219-M00002.png) |
| JP (1) | JPS5751276B2 (US20020193084A1-20021219-M00002.png) |
| DE (1) | DE2450162C3 (US20020193084A1-20021219-M00002.png) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
| JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
| NL7609607A (nl) * | 1976-08-30 | 1978-03-02 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
| US4194933A (en) * | 1977-05-06 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method for fabricating junction lasers having lateral current confinement |
| US4166278A (en) * | 1978-03-29 | 1979-08-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor injection laser device |
| US4183038A (en) * | 1978-03-29 | 1980-01-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
| DE2816270C3 (de) * | 1978-04-14 | 1983-01-13 | Mitsubishi Denki K.K., Tokyo | Injektions-Laserdiode |
| JPS5511371A (en) * | 1978-07-10 | 1980-01-26 | Mitsubishi Electric Corp | Semiconductor laser system |
| NL7811683A (nl) * | 1978-11-29 | 1980-06-02 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderin- richting en halfgeleiderinrichting vervaardigd volgens deze werkwijze. |
| US4297783A (en) * | 1979-01-30 | 1981-11-03 | Bell Telephone Laboratories, Incorporated | Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer |
| NL8101409A (nl) * | 1981-03-23 | 1982-10-18 | Philips Nv | Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
| US4378255A (en) * | 1981-05-06 | 1983-03-29 | University Of Illinois Foundation | Method for producing integrated semiconductor light emitter |
| US4504952A (en) * | 1982-06-01 | 1985-03-12 | At&T Bell Laboratories | Stripe-guide TJS laser |
| US4592793A (en) * | 1985-03-15 | 1986-06-03 | International Business Machines Corporation | Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates |
| EP0450255B1 (en) * | 1990-04-06 | 1994-07-06 | International Business Machines Corporation | Process for forming the ridge structure of a self-aligned semiconductor laser |
| JP2001168442A (ja) * | 1999-12-07 | 2001-06-22 | Sony Corp | 半導体レーザ素子の製造方法、配設基板および支持基板 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5141318B1 (US20020193084A1-20021219-M00002.png) * | 1969-04-01 | 1976-11-09 | ||
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
| US3691476A (en) * | 1970-12-31 | 1972-09-12 | Bell Telephone Labor Inc | Double heterostructure laser diodes |
| IT963303B (it) * | 1971-07-29 | 1974-01-10 | Licentia Gmbh | Laser a semiconduttore |
| US3747016A (en) * | 1971-08-26 | 1973-07-17 | Rca Corp | Semiconductor injection laser |
| US3824493A (en) * | 1972-09-05 | 1974-07-16 | Bell Telephone Labor Inc | Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror |
| US3855607A (en) * | 1973-05-29 | 1974-12-17 | Rca Corp | Semiconductor injection laser with reduced divergence of emitted beam |
-
1973
- 1973-10-23 JP JP48119221A patent/JPS5751276B2/ja not_active Expired
-
1974
- 1974-10-17 US US05/515,616 patent/US3961996A/en not_active Expired - Lifetime
- 1974-10-22 DE DE2450162A patent/DE2450162C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3961996A (en) | 1976-06-08 |
| DE2450162C3 (de) | 1979-01-11 |
| JPS5068786A (US20020193084A1-20021219-M00002.png) | 1975-06-09 |
| DE2450162A1 (de) | 1975-05-07 |
| DE2450162B2 (de) | 1978-04-20 |
