JPS57501706A - - Google Patents

Info

Publication number
JPS57501706A
JPS57501706A JP56503472A JP50347281A JPS57501706A JP S57501706 A JPS57501706 A JP S57501706A JP 56503472 A JP56503472 A JP 56503472A JP 50347281 A JP50347281 A JP 50347281A JP S57501706 A JPS57501706 A JP S57501706A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56503472A
Other languages
Japanese (ja)
Other versions
JPH0454388B2 (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS57501706A publication Critical patent/JPS57501706A/ja
Publication of JPH0454388B2 publication Critical patent/JPH0454388B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P32/141—
    • H10P32/171—
    • H10P76/20—
    • H10W20/01—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56503472A 1980-10-20 1981-10-19 Expired JPH0454388B2 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/198,428 US4345366A (en) 1980-10-20 1980-10-20 Self-aligned all-n+ polysilicon CMOS process

Publications (2)

Publication Number Publication Date
JPS57501706A true JPS57501706A (cg-RX-API-DMAC10.html) 1982-09-16
JPH0454388B2 JPH0454388B2 (cg-RX-API-DMAC10.html) 1992-08-31

Family

ID=22733341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56503472A Expired JPH0454388B2 (cg-RX-API-DMAC10.html) 1980-10-20 1981-10-19

Country Status (4)

Country Link
US (1) US4345366A (cg-RX-API-DMAC10.html)
EP (1) EP0063578B1 (cg-RX-API-DMAC10.html)
JP (1) JPH0454388B2 (cg-RX-API-DMAC10.html)
WO (1) WO1982001380A1 (cg-RX-API-DMAC10.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422885A (en) * 1981-12-18 1983-12-27 Ncr Corporation Polysilicon-doped-first CMOS process
US4412375A (en) * 1982-06-10 1983-11-01 Intel Corporation Method for fabricating CMOS devices with guardband
US4516313A (en) * 1983-05-27 1985-05-14 Ncr Corporation Unified CMOS/SNOS semiconductor fabrication process
US4633571A (en) * 1984-04-16 1987-01-06 At&T Bell Laboratories Method of manufacturing a CMOS cell array with transistor isolation
US4603472A (en) * 1984-04-19 1986-08-05 Siemens Aktiengesellschaft Method of making MOS FETs using silicate glass layer as gate edge masking for ion implantation
US4749662A (en) * 1984-12-14 1988-06-07 Rockwell International Corporation Diffused field CMOS-bulk process
US4701423A (en) * 1985-12-20 1987-10-20 Ncr Corporation Totally self-aligned CMOS process
JPS6446979A (en) * 1987-08-14 1989-02-21 Oki Electric Ind Co Ltd Analogue switch and sample-and-hold circuit with analogue switch
US5272367A (en) * 1988-05-02 1993-12-21 Micron Technology, Inc. Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams)
EP0413982B1 (en) * 1989-07-27 1997-05-14 Junichi Nishizawa Impurity doping method with adsorbed diffusion source
EP0417456A3 (en) * 1989-08-11 1991-07-03 Seiko Instruments Inc. Method of producing semiconductor device
CA2031253A1 (en) * 1989-12-01 1991-06-02 Kenji Aoki Method of producing bipolar transistor
CA2031254A1 (en) * 1989-12-01 1991-06-02 Kenji Aoki Doping method of barrier region in semiconductor device
JP2920546B2 (ja) * 1989-12-06 1999-07-19 セイコーインスツルメンツ株式会社 同極ゲートｍｉｓトランジスタの製造方法
US5366922A (en) * 1989-12-06 1994-11-22 Seiko Instruments Inc. Method for producing CMOS transistor
CA2031636A1 (en) * 1989-12-06 1991-06-07 Kenji Aoki Method of producing cmos transistor
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
WO1993016494A1 (en) * 1992-01-31 1993-08-19 Analog Devices, Inc. Complementary bipolar polysilicon emitter devices
US5605861A (en) * 1995-05-05 1997-02-25 Texas Instruments Incorporated Thin polysilicon doping by diffusion from a doped silicon dioxide film
US6245604B1 (en) 1996-01-16 2001-06-12 Micron Technology Bipolar-CMOS (BiCMOS) process for fabricating integrated circuits
US5585299A (en) * 1996-03-19 1996-12-17 United Microelectronics Corporation Process for fabricating a semiconductor electrostatic discharge (ESD) protective device
FR2757683B1 (fr) * 1996-12-20 1999-03-05 Sgs Thomson Microelectronics Transistor bipolaire et capacite
US5789300A (en) * 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
US6030752A (en) * 1997-02-25 2000-02-29 Advanced Micro Devices, Inc. Method of stitching segments defined by adjacent image patterns during the manufacture of a semiconductor device
US5956591A (en) * 1997-02-25 1999-09-21 Advanced Micro Devices, Inc. Method of making NMOS and PMOS devices having LDD structures using separate drive-in steps
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
CN117920371A (zh) 2017-07-27 2024-04-26 生物梅里埃有限公司 分离容器、包括分离容器的组件以及使用分离容器和组件的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214958A (en) * 1975-07-25 1977-02-04 Hitachi Ltd Cooling system for super cold temperature
JPS52137276A (en) * 1976-05-11 1977-11-16 Philips Nv Method of producing semiconductor device
JPS5324281A (en) * 1976-08-19 1978-03-06 Sony Corp Production of insulated gate type field effect transistors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700507A (en) * 1969-10-21 1972-10-24 Rca Corp Method of making complementary insulated gate field effect transistors
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
GB1503017A (en) * 1974-02-28 1978-03-08 Tokyo Shibaura Electric Co Method of manufacturing semiconductor devices
CA1017073A (en) * 1974-06-03 1977-09-06 Fairchild Camera And Instrument Corporation Complementary insulated gate field effect transistor structure and process for fabricating the structure
JPS5413779A (en) * 1977-07-04 1979-02-01 Toshiba Corp Semiconductor integrated circuit device
IT1166587B (it) * 1979-01-22 1987-05-05 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari ad alta integrazione per tensioni elevate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214958A (en) * 1975-07-25 1977-02-04 Hitachi Ltd Cooling system for super cold temperature
JPS52137276A (en) * 1976-05-11 1977-11-16 Philips Nv Method of producing semiconductor device
JPS5324281A (en) * 1976-08-19 1978-03-06 Sony Corp Production of insulated gate type field effect transistors

Also Published As

Publication number Publication date
EP0063578B1 (en) 1987-03-11
EP0063578A1 (en) 1982-11-03
EP0063578A4 (en) 1984-07-06
WO1982001380A1 (en) 1982-04-29
JPH0454388B2 (cg-RX-API-DMAC10.html) 1992-08-31
US4345366A (en) 1982-08-24

Similar Documents

Publication Publication Date Title
FR2473585B1 (cg-RX-API-DMAC10.html)
FR2484038B1 (cg-RX-API-DMAC10.html)
CH655632B (cg-RX-API-DMAC10.html)
JPS57501706A (cg-RX-API-DMAC10.html)
DE3050577T1 (cg-RX-API-DMAC10.html)
DE3153250A1 (cg-RX-API-DMAC10.html)
CH655418B (cg-RX-API-DMAC10.html)
JPS56108051U (cg-RX-API-DMAC10.html)
DE3152509T1 (cg-RX-API-DMAC10.html)
FR2491215B1 (cg-RX-API-DMAC10.html)
CH655603B (cg-RX-API-DMAC10.html)
IN153737B (cg-RX-API-DMAC10.html)
FR2472955B1 (cg-RX-API-DMAC10.html)
FR2473547B1 (cg-RX-API-DMAC10.html)
FR2473388B1 (cg-RX-API-DMAC10.html)
DE3050629A1 (cg-RX-API-DMAC10.html)
GR74629B (cg-RX-API-DMAC10.html)
FR2483411B1 (cg-RX-API-DMAC10.html)
FR2473595B1 (cg-RX-API-DMAC10.html)
CH655648B (cg-RX-API-DMAC10.html)
FR2473618B1 (cg-RX-API-DMAC10.html)
FR2473068B1 (cg-RX-API-DMAC10.html)
FR2461055B1 (cg-RX-API-DMAC10.html)
FR2472961B1 (cg-RX-API-DMAC10.html)
IN152976B (cg-RX-API-DMAC10.html)