JPS57501656A - - Google Patents
Info
- Publication number
- JPS57501656A JPS57501656A JP56503480A JP50348081A JPS57501656A JP S57501656 A JPS57501656 A JP S57501656A JP 56503480 A JP56503480 A JP 56503480A JP 50348081 A JP50348081 A JP 50348081A JP S57501656 A JPS57501656 A JP S57501656A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
- H01L21/26553—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20164680A | 1980-10-28 | 1980-10-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57501656A true JPS57501656A (fr) | 1982-09-09 |
Family
ID=22746674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56503480A Pending JPS57501656A (fr) | 1980-10-28 | 1981-10-15 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0063139A4 (fr) |
JP (1) | JPS57501656A (fr) |
WO (1) | WO1982001619A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4725560A (en) * | 1986-09-08 | 1988-02-16 | International Business Machines Corp. | Silicon oxynitride storage node dielectric |
US4945394A (en) * | 1987-10-26 | 1990-07-31 | North Carolina State University | Bipolar junction transistor on silicon carbide |
US5389552A (en) * | 1993-01-29 | 1995-02-14 | National Semiconductor Corporation | Transistors having bases with different shape top surfaces |
FR3026558B1 (fr) | 2014-09-26 | 2018-03-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'activation de dopants dans une couche semi-conductrice a base de gan |
FR3026556A1 (fr) | 2014-09-26 | 2016-04-01 | Commissariat Energie Atomique | Procede de fabrication d'une couche semi-conductrice a base de gan ameliore |
FR3026555A1 (fr) * | 2014-09-26 | 2016-04-01 | Commissariat Energie Atomique | Procede d'activation de dopants dans une couche semi-conductrice a base de gan par implantations et traitements thermiques successifs |
FR3026557B1 (fr) | 2014-09-26 | 2018-03-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de dopage d'un semi-conducteur a base de gan |
CN112071904B (zh) * | 2020-08-11 | 2024-01-30 | 陕西炬脉瑞丰科技有限公司 | 一种高压雪崩晶体管 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017887A (en) * | 1972-07-25 | 1977-04-12 | The United States Of America As Represented By The Secretary Of The Air Force | Method and means for passivation and isolation in semiconductor devices |
US3897273A (en) * | 1972-11-06 | 1975-07-29 | Hughes Aircraft Co | Process for forming electrically isolating high resistivity regions in GaAs |
US3914784A (en) * | 1973-12-10 | 1975-10-21 | Hughes Aircraft Co | Ion Implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates |
US4033788A (en) * | 1973-12-10 | 1977-07-05 | Hughes Aircraft Company | Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates |
US4055443A (en) * | 1975-06-19 | 1977-10-25 | Jury Stepanovich Akimov | Method for producing semiconductor matrix of light-emitting elements utilizing ion implantation and diffusion heating |
US4058413A (en) * | 1976-05-13 | 1977-11-15 | The United States Of America As Represented By The Secretary Of The Air Force | Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer |
DE2631873C2 (de) * | 1976-07-15 | 1986-07-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand |
FR2374743A1 (fr) * | 1976-12-20 | 1978-07-13 | Radiotechnique Compelec | Transistor multicouche a emetteur compose |
US4143392A (en) * | 1977-08-30 | 1979-03-06 | Signetics Corporation | Composite jfet-bipolar structure |
GB2023340B (en) * | 1978-06-01 | 1982-09-02 | Mitsubishi Electric Corp | Integrated circuits |
JPS6028397B2 (ja) * | 1978-10-26 | 1985-07-04 | 株式会社東芝 | 半導体装置の製造方法 |
US4267014A (en) * | 1980-02-29 | 1981-05-12 | The United States Of America As Represented By The Secretary Of The Navy | Semiconductor encapsulant for annealing ion-implanted GaAs |
-
1981
- 1981-10-15 WO PCT/US1981/001394 patent/WO1982001619A1/fr not_active Application Discontinuation
- 1981-10-15 EP EP19810902917 patent/EP0063139A4/fr not_active Withdrawn
- 1981-10-15 JP JP56503480A patent/JPS57501656A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0063139A4 (fr) | 1984-02-07 |
WO1982001619A1 (fr) | 1982-05-13 |
EP0063139A1 (fr) | 1982-10-27 |