JPS5750052B2 - - Google Patents

Info

Publication number
JPS5750052B2
JPS5750052B2 JP15266075A JP15266075A JPS5750052B2 JP S5750052 B2 JPS5750052 B2 JP S5750052B2 JP 15266075 A JP15266075 A JP 15266075A JP 15266075 A JP15266075 A JP 15266075A JP S5750052 B2 JPS5750052 B2 JP S5750052B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15266075A
Other languages
Japanese (ja)
Other versions
JPS5275273A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15266075A priority Critical patent/JPS5275273A/ja
Priority to US05/751,124 priority patent/US4102715A/en
Priority to DE2657415A priority patent/DE2657415C2/de
Priority to FR7638415A priority patent/FR2335950A1/fr
Priority to GB53080/76A priority patent/GB1581726A/en
Publication of JPS5275273A publication Critical patent/JPS5275273A/ja
Publication of JPS5750052B2 publication Critical patent/JPS5750052B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP15266075A 1975-12-19 1975-12-19 Method of forming boron nitride-boron oxidesilicon oxide mixed film Granted JPS5275273A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP15266075A JPS5275273A (en) 1975-12-19 1975-12-19 Method of forming boron nitride-boron oxidesilicon oxide mixed film
US05/751,124 US4102715A (en) 1975-12-19 1976-12-16 Method for diffusing an impurity into a semiconductor body
DE2657415A DE2657415C2 (de) 1975-12-19 1976-12-17 Verfahren zum Eindiffundieren von Fremdstoffen in ein Halbleitersubstrat
FR7638415A FR2335950A1 (fr) 1975-12-19 1976-12-20 Procede pour realiser la diffusion d'une impurete dans un corps semi-conducteur
GB53080/76A GB1581726A (en) 1975-12-19 1976-12-20 Method for diffusing an impurity into a semiconductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15266075A JPS5275273A (en) 1975-12-19 1975-12-19 Method of forming boron nitride-boron oxidesilicon oxide mixed film

Publications (2)

Publication Number Publication Date
JPS5275273A JPS5275273A (en) 1977-06-24
JPS5750052B2 true JPS5750052B2 (enrdf_load_stackoverflow) 1982-10-25

Family

ID=15545285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15266075A Granted JPS5275273A (en) 1975-12-19 1975-12-19 Method of forming boron nitride-boron oxidesilicon oxide mixed film

Country Status (1)

Country Link
JP (1) JPS5275273A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04165623A (ja) * 1990-10-30 1992-06-11 Nec Corp シリコンボロンナイトライド膜の形成方法

Also Published As

Publication number Publication date
JPS5275273A (en) 1977-06-24

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