JPS5745067B2 - - Google Patents
Info
- Publication number
- JPS5745067B2 JPS5745067B2 JP50129630A JP12963075A JPS5745067B2 JP S5745067 B2 JPS5745067 B2 JP S5745067B2 JP 50129630 A JP50129630 A JP 50129630A JP 12963075 A JP12963075 A JP 12963075A JP S5745067 B2 JPS5745067 B2 JP S5745067B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50129630A JPS5252593A (en) | 1975-10-27 | 1975-10-27 | Semiconductor light receiving diode |
| CA263,362A CA1068806A (en) | 1975-10-27 | 1976-10-14 | Semiconductor photodiodes and method of manufacturing the same |
| US05/734,182 US4142200A (en) | 1975-10-27 | 1976-10-20 | Semiconductor photodiodes |
| FR7632260A FR2330149A1 (fr) | 1975-10-27 | 1976-10-26 | Photodiode a semi-conducteur et procede de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50129630A JPS5252593A (en) | 1975-10-27 | 1975-10-27 | Semiconductor light receiving diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5252593A JPS5252593A (en) | 1977-04-27 |
| JPS5745067B2 true JPS5745067B2 (US07923587-20110412-C00001.png) | 1982-09-25 |
Family
ID=15014232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50129630A Granted JPS5252593A (en) | 1975-10-27 | 1975-10-27 | Semiconductor light receiving diode |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4142200A (US07923587-20110412-C00001.png) |
| JP (1) | JPS5252593A (US07923587-20110412-C00001.png) |
| CA (1) | CA1068806A (US07923587-20110412-C00001.png) |
| FR (1) | FR2330149A1 (US07923587-20110412-C00001.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174051U (US07923587-20110412-C00001.png) * | 1985-04-15 | 1986-10-29 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7709618A (nl) * | 1977-09-01 | 1979-03-05 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
| US4326211A (en) * | 1977-09-01 | 1982-04-20 | U.S. Philips Corporation | N+PP-PP-P+ Avalanche photodiode |
| US4219830A (en) * | 1978-06-19 | 1980-08-26 | Gibbons James F | Semiconductor solar cell |
| US4441114A (en) * | 1981-12-22 | 1984-04-03 | International Business Machines Corporation | CMOS Subsurface breakdown zener diode |
| US4518255A (en) * | 1982-08-20 | 1985-05-21 | Mcdonnell Douglas Corporation | Temperature tracking range finder |
| US4616247A (en) * | 1983-11-10 | 1986-10-07 | At&T Bell Laboratories | P-I-N and avalanche photodiodes |
| CA1321660C (en) * | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
| CA1280196C (en) * | 1987-07-17 | 1991-02-12 | Paul Perry Webb | Avanlanche photodiode |
| JP2729130B2 (ja) * | 1992-04-16 | 1998-03-18 | 三菱電機株式会社 | 半導体装置の製造パラメタの設定方法及びその装置 |
| JPH07240534A (ja) * | 1993-03-16 | 1995-09-12 | Seiko Instr Inc | 光電変換半導体装置及びその製造方法 |
| US5446308A (en) * | 1994-04-04 | 1995-08-29 | General Electric Company | Deep-diffused planar avalanche photodiode |
| US5438217A (en) * | 1994-04-29 | 1995-08-01 | General Electric Company | Planar avalanche photodiode array with sidewall segment |
| US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
| JPH1126741A (ja) * | 1997-07-04 | 1999-01-29 | Toshiba Corp | 固体撮像装置 |
| US6528827B2 (en) | 2000-11-10 | 2003-03-04 | Optolynx, Inc. | MSM device and method of manufacturing same |
| US7078741B2 (en) * | 2002-02-01 | 2006-07-18 | Picometrix, Inc. | Enhanced photodetector |
| US7323731B2 (en) * | 2003-12-12 | 2008-01-29 | Canon Kabushiki Kaisha | Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system |
| RU2290721C2 (ru) * | 2004-05-05 | 2006-12-27 | Борис Анатольевич Долгошеин | Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя |
| WO2008129433A2 (en) * | 2007-04-24 | 2008-10-30 | Koninklijke Philips Electronics N.V. | Photodiodes and fabrication thereof |
| JP5493430B2 (ja) | 2009-03-31 | 2014-05-14 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| DE102011003454A1 (de) * | 2011-02-01 | 2012-08-02 | Siemens Aktiengesellschaft | Strahlungsdirektkonverter, Strahlungsdetektor, medizintechnisches Gerät und Verfahren zum Erzeugen eines Strahlungsdirektkonverters |
| NL2011568A (en) * | 2012-10-31 | 2014-05-06 | Asml Netherlands Bv | Sensor and lithographic apparatus. |
| DE102013018789A1 (de) * | 2012-11-29 | 2014-06-05 | Infineon Technologies Ag | Steuern lichterzeugter Ladungsträger |
| JP7169071B2 (ja) | 2018-02-06 | 2022-11-10 | ソニーセミコンダクタソリューションズ株式会社 | 画素構造、撮像素子、撮像装置、および電子機器 |
| US11508869B2 (en) * | 2019-08-06 | 2022-11-22 | Ohio State Innovation Foundation | Lateral interband type II engineered (LITE) detector |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1300164B (de) * | 1967-01-26 | 1969-07-31 | Itt Ind Gmbh Deutsche | Verfahren zum Herstellen von Zenerdioden |
| FR2108781B1 (US07923587-20110412-C00001.png) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
| US3886579A (en) * | 1972-07-28 | 1975-05-27 | Hitachi Ltd | Avalanche photodiode |
| FR2252653B1 (US07923587-20110412-C00001.png) * | 1973-11-28 | 1976-10-01 | Thomson Csf | |
| CA1015069A (en) * | 1974-04-01 | 1977-08-02 | Chung K. Kim | Dynamic negative resistance diode |
| US3921192A (en) * | 1974-05-28 | 1975-11-18 | Gen Electric | Avalanche diode |
| US3990099A (en) * | 1974-12-05 | 1976-11-02 | Rca Corporation | Planar Trapatt diode |
| US4060820A (en) * | 1976-01-05 | 1977-11-29 | Raytheon Company | Low noise read-type diode |
-
1975
- 1975-10-27 JP JP50129630A patent/JPS5252593A/ja active Granted
-
1976
- 1976-10-14 CA CA263,362A patent/CA1068806A/en not_active Expired
- 1976-10-20 US US05/734,182 patent/US4142200A/en not_active Expired - Lifetime
- 1976-10-26 FR FR7632260A patent/FR2330149A1/fr active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174051U (US07923587-20110412-C00001.png) * | 1985-04-15 | 1986-10-29 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5252593A (en) | 1977-04-27 |
| FR2330149A1 (fr) | 1977-05-27 |
| CA1068806A (en) | 1979-12-25 |
| FR2330149B1 (US07923587-20110412-C00001.png) | 1979-03-02 |
| US4142200A (en) | 1979-02-27 |
