JPS5745061B2 - - Google Patents

Info

Publication number
JPS5745061B2
JPS5745061B2 JP4414172A JP4414172A JPS5745061B2 JP S5745061 B2 JPS5745061 B2 JP S5745061B2 JP 4414172 A JP4414172 A JP 4414172A JP 4414172 A JP4414172 A JP 4414172A JP S5745061 B2 JPS5745061 B2 JP S5745061B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4414172A
Other languages
Japanese (ja)
Other versions
JPS495575A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4414172A priority Critical patent/JPS5745061B2/ja
Priority to GB2009073A priority patent/GB1379011A/en
Priority to DE19732321390 priority patent/DE2321390C3/en
Priority to FR7315568A priority patent/FR2183111B1/fr
Priority to CA170,129A priority patent/CA980918A/en
Priority to IT4975573A priority patent/IT988158B/en
Publication of JPS495575A publication Critical patent/JPS495575A/ja
Publication of JPS5745061B2 publication Critical patent/JPS5745061B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
JP4414172A 1972-05-02 1972-05-02 Expired JPS5745061B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP4414172A JPS5745061B2 (en) 1972-05-02 1972-05-02
GB2009073A GB1379011A (en) 1972-05-02 1973-04-27 Method of manufacturing semiconductor devices
DE19732321390 DE2321390C3 (en) 1972-05-02 1973-04-27 A method of manufacturing a semiconductor device
FR7315568A FR2183111B1 (en) 1972-05-02 1973-04-27
CA170,129A CA980918A (en) 1972-05-02 1973-05-01 Method of forming a nickel electrode on a silicon substrate
IT4975573A IT988158B (en) 1972-05-02 1973-05-02 PROCEDURE FOR THE MANUFACTURING OF SEMICONDUCTOR DEVICES AND PRODUCT OBTAINED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4414172A JPS5745061B2 (en) 1972-05-02 1972-05-02

Publications (2)

Publication Number Publication Date
JPS495575A JPS495575A (en) 1974-01-18
JPS5745061B2 true JPS5745061B2 (en) 1982-09-25

Family

ID=12683347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4414172A Expired JPS5745061B2 (en) 1972-05-02 1972-05-02

Country Status (6)

Country Link
JP (1) JPS5745061B2 (en)
CA (1) CA980918A (en)
DE (1) DE2321390C3 (en)
FR (1) FR2183111B1 (en)
GB (1) GB1379011A (en)
IT (1) IT988158B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182010A (en) * 1984-02-29 1985-09-17 Canon Electronics Inc Head device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS591667A (en) * 1982-05-20 1984-01-07 ゼネラル・エレクトリツク・カンパニイ Platinum non-electrolytic plating process for silicon

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241982A (en) * 1958-08-13 1900-01-01
NL134170C (en) * 1963-12-17 1900-01-01
DE1213921B (en) * 1964-08-25 1966-04-07 Bosch Gmbh Robert Method for manufacturing a semiconductor device
DE1283970B (en) * 1966-03-19 1968-11-28 Siemens Ag Metallic contact on a semiconductor component
US3599054A (en) * 1968-11-22 1971-08-10 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182010A (en) * 1984-02-29 1985-09-17 Canon Electronics Inc Head device

Also Published As

Publication number Publication date
CA980918A (en) 1975-12-30
IT988158B (en) 1975-04-10
GB1379011A (en) 1975-01-02
DE2321390C3 (en) 1982-07-08
FR2183111B1 (en) 1976-11-12
JPS495575A (en) 1974-01-18
DE2321390B2 (en) 1976-10-28
DE2321390A1 (en) 1973-11-15
FR2183111A1 (en) 1973-12-14

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