JPS5740791A - High-density bubble memory element - Google Patents

High-density bubble memory element

Info

Publication number
JPS5740791A
JPS5740791A JP11667580A JP11667580A JPS5740791A JP S5740791 A JPS5740791 A JP S5740791A JP 11667580 A JP11667580 A JP 11667580A JP 11667580 A JP11667580 A JP 11667580A JP S5740791 A JPS5740791 A JP S5740791A
Authority
JP
Japan
Prior art keywords
pattern
transfer
transfer path
magnetic
domain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11667580A
Other languages
Japanese (ja)
Other versions
JPS6059669B2 (en
Inventor
Naotake Orihara
Takeyasu Yanase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55116675A priority Critical patent/JPS6059669B2/en
Publication of JPS5740791A publication Critical patent/JPS5740791A/en
Publication of JPS6059669B2 publication Critical patent/JPS6059669B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0875—Organisation of a plurality of magnetic shift registers
    • G11C19/0883—Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders
    • G11C19/0891—Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders using hybrid structure, e.g. ion doped layers

Abstract

PURPOSE:To obtain a high-density element by using known pattern formation technique by constituting a bubble magnetic-domain transfer means by an ion inhection transfer pattern and a bubble magnetic-domain transfer means by a soft-megnetic- material transfer pattern. CONSTITUTION:An information writing transfer path 10 and information reading transfer path 11 are formed by a half-disk pattern composed of a soft-magnetic pattern which has a larger pattern period 1 and large minimum limit size. The minor loop 12 of a high-density close pattern is formed by ion injection. Namely, an input part area 18 consisting of a generator 14, an information writing gate 15, and the information writing transfer path 10, and an output area 17 consisting of an information reading gate 16, the information reading transfer path 11, and a detector 13 including a bubble magnetic-domain expansion part are constituted by the half-disk pattern with the long pattern period.
JP55116675A 1980-08-25 1980-08-25 High density bubble memory element Expired JPS6059669B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116675A JPS6059669B2 (en) 1980-08-25 1980-08-25 High density bubble memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116675A JPS6059669B2 (en) 1980-08-25 1980-08-25 High density bubble memory element

Publications (2)

Publication Number Publication Date
JPS5740791A true JPS5740791A (en) 1982-03-06
JPS6059669B2 JPS6059669B2 (en) 1985-12-26

Family

ID=14693094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116675A Expired JPS6059669B2 (en) 1980-08-25 1980-08-25 High density bubble memory element

Country Status (1)

Country Link
JP (1) JPS6059669B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186287A (en) * 1981-05-11 1982-11-16 Hitachi Ltd Magnetic bubble element
JPS58108085A (en) * 1981-12-18 1983-06-28 Hitachi Ltd Magnetic bubble element
JPS606811A (en) * 1983-06-24 1985-01-14 Mitsubishi Electric Corp Strain observing device
JPS607682A (en) * 1983-06-27 1985-01-16 Fujitsu Ltd Magnetic bubble memory
US4745578A (en) * 1985-09-20 1988-05-17 Hitachi, Ltd. Magnetic bubble memory device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226967U (en) * 1985-07-30 1987-02-18

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086572A (en) * 1974-08-23 1978-04-25 Texas Instruments Incorporated Magnetic bubble domain replicator
US4176404A (en) * 1978-01-13 1979-11-27 Texas Instruments Incorporated Bubble memory structure with enhanced data density
JPS5580878A (en) * 1978-12-08 1980-06-18 Fujitsu Ltd Magnetic bubble memory device
JPS5589975A (en) * 1978-12-26 1980-07-08 Fujitsu Ltd Magnetic bubble memory unit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086572A (en) * 1974-08-23 1978-04-25 Texas Instruments Incorporated Magnetic bubble domain replicator
US4176404A (en) * 1978-01-13 1979-11-27 Texas Instruments Incorporated Bubble memory structure with enhanced data density
JPS5580878A (en) * 1978-12-08 1980-06-18 Fujitsu Ltd Magnetic bubble memory device
JPS5589975A (en) * 1978-12-26 1980-07-08 Fujitsu Ltd Magnetic bubble memory unit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186287A (en) * 1981-05-11 1982-11-16 Hitachi Ltd Magnetic bubble element
JPH0313673B2 (en) * 1981-05-11 1991-02-25 Hitachi Ltd
JPS58108085A (en) * 1981-12-18 1983-06-28 Hitachi Ltd Magnetic bubble element
JPS606811A (en) * 1983-06-24 1985-01-14 Mitsubishi Electric Corp Strain observing device
JPS607682A (en) * 1983-06-27 1985-01-16 Fujitsu Ltd Magnetic bubble memory
JPS622386B2 (en) * 1983-06-27 1987-01-19 Fujitsu Ltd
US4745578A (en) * 1985-09-20 1988-05-17 Hitachi, Ltd. Magnetic bubble memory device

Also Published As

Publication number Publication date
JPS6059669B2 (en) 1985-12-26

Similar Documents

Publication Publication Date Title
JPS5740791A (en) High-density bubble memory element
JPS5344062A (en) Wristwatch
JPS57162171A (en) Magnetic bubble memory chip
NO153233C (en) DEVICE FOR CONTROL OF AN EMPLOYEE HEAD IN THIS DIRECTION DIRECTION.
JPS56137580A (en) Semiconductor storage device
JPS52142990A (en) Display device
JPS5580878A (en) Magnetic bubble memory device
JPS5393735A (en) Memory control system
SE433652B (en) CONTROL VALVE WITH PART A INPUT SPORT FOR AN UNCONTINUED UNDER PRESSURE SUPPLY CONTROL MEDIUM, PART A RETURN, AND PART A ON THE VALVE OUTSIDE OF A TYPE SURROUNDING OUTPUT
JPS5316609A (en) Magnetic memory device
JPS56114189A (en) Control system for magnetic bubble memory
JPS53123631A (en) Read only memory
NL7608998A (en) CROSS-BAR WALL OPERATING MEMORY SYSTEM WITH MAGNETO-INDUCTIVE READING AND BIPOLAR ASYMMETRIC CONTROL FIELDS IN THE DIFFICULT MAGNETIZATION DIRECTION AND LONG READING GUIDE.
JPS647056A (en) Image forming device
JPS55135389A (en) Magnetic bubble memory element
JPS5350845A (en) Recording stylus for photosensitive material
JPS5256833A (en) Shift register type memory element
JPS528812A (en) Read-out information valve separate circuit
JPS53108740A (en) Memory circuit
JPS57117172A (en) Magnetic bubble memory element
JPS5315718A (en) Field effect type semiconductor memory unit and its reading method
ES503840A0 (en) IMPROVEMENTS INTRODUCED IN A REGULATED SOURCE OF SATURATION CORE ENERGY.
JPS5528142A (en) Control unit
JPS5255335A (en) Magnetic bubble memory
JPS57195378A (en) Magnetic bubble memory chip