JPS5731308B2 - - Google Patents
Info
- Publication number
- JPS5731308B2 JPS5731308B2 JP2768479A JP2768479A JPS5731308B2 JP S5731308 B2 JPS5731308 B2 JP S5731308B2 JP 2768479 A JP2768479 A JP 2768479A JP 2768479 A JP2768479 A JP 2768479A JP S5731308 B2 JPS5731308 B2 JP S5731308B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2768479A JPS55120171A (en) | 1979-03-12 | 1979-03-12 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2768479A JPS55120171A (en) | 1979-03-12 | 1979-03-12 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55120171A JPS55120171A (en) | 1980-09-16 |
| JPS5731308B2 true JPS5731308B2 (enrdf_load_stackoverflow) | 1982-07-03 |
Family
ID=12227786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2768479A Granted JPS55120171A (en) | 1979-03-12 | 1979-03-12 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55120171A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0293320U (enrdf_load_stackoverflow) * | 1989-01-11 | 1990-07-25 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5324982A (en) | 1985-09-25 | 1994-06-28 | Hitachi, Ltd. | Semiconductor memory device having bipolar transistor and structure to avoid soft error |
| US6740958B2 (en) | 1985-09-25 | 2004-05-25 | Renesas Technology Corp. | Semiconductor memory device |
| JPS62131581A (ja) * | 1985-12-03 | 1987-06-13 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JP2655765B2 (ja) * | 1991-05-29 | 1997-09-24 | ローム株式会社 | 半導体装置 |
| JP2799530B2 (ja) * | 1991-11-16 | 1998-09-17 | 三菱電機株式会社 | 半導体記憶装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS502480A (enrdf_load_stackoverflow) * | 1973-05-08 | 1975-01-11 |
-
1979
- 1979-03-12 JP JP2768479A patent/JPS55120171A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0293320U (enrdf_load_stackoverflow) * | 1989-01-11 | 1990-07-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55120171A (en) | 1980-09-16 |