JPS5726425B2 - - Google Patents
Info
- Publication number
- JPS5726425B2 JPS5726425B2 JP15735276A JP15735276A JPS5726425B2 JP S5726425 B2 JPS5726425 B2 JP S5726425B2 JP 15735276 A JP15735276 A JP 15735276A JP 15735276 A JP15735276 A JP 15735276A JP S5726425 B2 JPS5726425 B2 JP S5726425B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15735276A JPS5382278A (en) | 1976-12-28 | 1976-12-28 | Production of semiconductor device |
US05/863,445 US4156963A (en) | 1976-12-28 | 1977-12-22 | Method for manufacturing a semiconductor device |
DE2757821A DE2757821C3 (de) | 1976-12-28 | 1977-12-23 | Verfahren zur Herstellung einer Mesa-Halbleiteranordnung mit Druckkontakt |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15735276A JPS5382278A (en) | 1976-12-28 | 1976-12-28 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5382278A JPS5382278A (en) | 1978-07-20 |
JPS5726425B2 true JPS5726425B2 (ja) | 1982-06-04 |
Family
ID=15647790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15735276A Granted JPS5382278A (en) | 1976-12-28 | 1976-12-28 | Production of semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4156963A (ja) |
JP (1) | JPS5382278A (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4402004A (en) * | 1978-01-07 | 1983-08-30 | Tokyo Shibaura Denki Kabushiki Kaisha | High current press pack semiconductor device having a mesa structure |
US4232440A (en) * | 1979-02-27 | 1980-11-11 | Bell Telephone Laboratories, Incorporated | Contact structure for light emitting device |
DE3037316C2 (de) * | 1979-10-03 | 1982-12-23 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verfahren zur Herstellung von Leistungsthyristoren |
US4470856A (en) * | 1983-02-07 | 1984-09-11 | Hughes Aircraft Company | Self-compensating hydrostatic flattening of semiconductor substrates |
JPS60132366A (ja) * | 1983-12-21 | 1985-07-15 | Toshiba Corp | 半導体装置 |
US4616403A (en) * | 1984-08-31 | 1986-10-14 | Texas Instruments Incorporated | Configuration of a metal insulator semiconductor with a processor based gate |
US5210601A (en) * | 1989-10-31 | 1993-05-11 | Kabushiki Kaisha Toshiba | Compression contacted semiconductor device and method for making of the same |
SE470226B (sv) * | 1991-07-01 | 1993-12-06 | Asea Brown Boveri | GTO-tyristor jämte förfarande för framställning av en GTO- tyristor |
DE10147887C2 (de) * | 2001-09-28 | 2003-10-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit einem Kontakt, der eine Mehrzahl von voneinander beabstandeten Kontaktstellen umfaßt |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5056880A (ja) * | 1973-09-17 | 1975-05-17 | ||
JPS51121259A (en) * | 1975-04-17 | 1976-10-23 | Agency Of Ind Science & Technol | Semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2287107A1 (fr) * | 1974-10-01 | 1976-04-30 | Jeumont Schneider | Procede pour le serrage d'un boitier de semi-conducteur de puissance monte entre deux radiateurs et dispositif pour la mise en oeuvre de ce procede |
GB1506735A (en) * | 1975-03-21 | 1978-04-12 | Westinghouse Brake & Signal | Semiconductor devices |
US4068368A (en) * | 1975-10-14 | 1978-01-17 | The Bendix Corporation | Closure for semiconductor device and method of construction |
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1976
- 1976-12-28 JP JP15735276A patent/JPS5382278A/ja active Granted
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1977
- 1977-12-22 US US05/863,445 patent/US4156963A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5056880A (ja) * | 1973-09-17 | 1975-05-17 | ||
JPS51121259A (en) * | 1975-04-17 | 1976-10-23 | Agency Of Ind Science & Technol | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5382278A (en) | 1978-07-20 |
US4156963A (en) | 1979-06-05 |