JPS5723258A - Flip-chip type monolithic gaasic - Google Patents

Flip-chip type monolithic gaasic

Info

Publication number
JPS5723258A
JPS5723258A JP9853580A JP9853580A JPS5723258A JP S5723258 A JPS5723258 A JP S5723258A JP 9853580 A JP9853580 A JP 9853580A JP 9853580 A JP9853580 A JP 9853580A JP S5723258 A JPS5723258 A JP S5723258A
Authority
JP
Japan
Prior art keywords
parts
electrode
terminal
earthing
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9853580A
Other languages
Japanese (ja)
Inventor
Masaaki Nakatani
Osamu Ishihara
Yoshinobu Kadowaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9853580A priority Critical patent/JPS5723258A/en
Publication of JPS5723258A publication Critical patent/JPS5723258A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the characteristic in the ultrahigh frequency band by a method wherein an N-type epitaxial layer on a semiinsulative substrate is provided with an FET, passive element and diode to be made into an IC forming thickly an earthing and the input/output terminal parts to be mounted in a package. CONSTITUTION:The Schottky gate electrode 4 in an FET formed on the substrate 1 through a metal inductance 5 with the input terminal, while the drain electrode 3 with the output terminal 9 and the source electrode 2 with the earthing terminal 7 are respectively connected. Between the inut terminal 8 and the earthing electrode 7, a metal gap capacitance 6 is connected to be made into a chip 10, Which is made into an IC. Each of terminals 7-9 of the chip 10 are provided with the parts 71, 88 and 91 with a thick metal layer each plated with Au and such and these parts each are mounted on the electrode parts each of the package provided with the input/output external leading-out terminals 14 and 15 to be made into an amplifier for ultrahigh frequency. Beause wire connection is not required is said configuration, reduction of parasitic inductance is made possible to improve an frequency characteristic.
JP9853580A 1980-07-17 1980-07-17 Flip-chip type monolithic gaasic Pending JPS5723258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9853580A JPS5723258A (en) 1980-07-17 1980-07-17 Flip-chip type monolithic gaasic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9853580A JPS5723258A (en) 1980-07-17 1980-07-17 Flip-chip type monolithic gaasic

Publications (1)

Publication Number Publication Date
JPS5723258A true JPS5723258A (en) 1982-02-06

Family

ID=14222369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9853580A Pending JPS5723258A (en) 1980-07-17 1980-07-17 Flip-chip type monolithic gaasic

Country Status (1)

Country Link
JP (1) JPS5723258A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490735A (en) * 1981-09-08 1984-12-25 Licentia Patent-Verwaltungs-G.M.B.H. Monolithic input stage of an optical receiver

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490735A (en) * 1981-09-08 1984-12-25 Licentia Patent-Verwaltungs-G.M.B.H. Monolithic input stage of an optical receiver

Similar Documents

Publication Publication Date Title
US9673766B1 (en) Class F amplifiers using resonant circuits in an output matching network
US4107728A (en) Package for push-pull semiconductor devices
US4193083A (en) Package for push-pull semiconductor devices
WO2004049394A3 (en) Digital and rf system and method therefor
DE69934717D1 (en) POWER TRANSISTOR ASSEMBLY HIGHER FREQUENCY
GB1193837A (en) Improvements in or relating to Face Bonding of Semiconductor Devices
EP0393584A2 (en) High frequency semiconductor device
KR20030082456A (en) Semiconductor switching circuit device
JPS5723258A (en) Flip-chip type monolithic gaasic
JPS57104265A (en) Semiconductor device
GB1204743A (en) Integrated circuit amplifier
CA1200017A (en) Microwave field effect transistor
JPS57164548A (en) Semiconductor device
JPS57141946A (en) Semiconductor device
JPH10150068A (en) Semiconductor device
EP0353308A4 (en) Semiconductor device
JPS57157548A (en) Microwave integrated circuit
JPS5736860A (en) Semiconductor device
JPS55148450A (en) Semiconductor device
JPS61172376A (en) Semiconductor device
JPS56130962A (en) Gaas integrated circuit
JPS61104673A (en) Fet device for ultrahigh frequency
JPS5726458A (en) Resin-sealed semiconductor device
GB1208266A (en) Improvements in or relating to integrated circuits
JPS55148449A (en) Semiconductor device