JPS57210682A - Semiconductor laser modulating circuit - Google Patents

Semiconductor laser modulating circuit

Info

Publication number
JPS57210682A
JPS57210682A JP9562781A JP9562781A JPS57210682A JP S57210682 A JPS57210682 A JP S57210682A JP 9562781 A JP9562781 A JP 9562781A JP 9562781 A JP9562781 A JP 9562781A JP S57210682 A JPS57210682 A JP S57210682A
Authority
JP
Japan
Prior art keywords
waveform
transistor
shows
semiconductor laser
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9562781A
Other languages
Japanese (ja)
Other versions
JPH04396B2 (en
Inventor
Akira Miyauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9562781A priority Critical patent/JPS57210682A/en
Publication of JPS57210682A publication Critical patent/JPS57210682A/en
Publication of JPH04396B2 publication Critical patent/JPH04396B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To effectively short the emission and stop of a light from a semiconductor laser by forming overshoot and undershoot at the drive current of the semiconductor laser diode. CONSTITUTION:A transistor TR3 employs an auxiliary amplifying transistor, and DIF is differentiating circuit. Figure A shows an input signal waveform of the transistor TR1, Figure B shows the waveform of the collector at the left side transistor of the TR2 when a circuit with only a transistor TR2 is operated, Figure C shows the waveform passed through the transistor TR3 and the differentiating circuit DIF, and Figure D shows the waveform for driving a laser diode LD as the total waveform of the waveforms in Figures B and C. Since the laser diode operates to abruptly rise and fall the input signal waveform through this circuit, a light output waveform similar to rectangular shape can be obtained, an accuracy in an output signal corresponding to the input high speed signal can be improved.
JP9562781A 1981-06-20 1981-06-20 Semiconductor laser modulating circuit Granted JPS57210682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9562781A JPS57210682A (en) 1981-06-20 1981-06-20 Semiconductor laser modulating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9562781A JPS57210682A (en) 1981-06-20 1981-06-20 Semiconductor laser modulating circuit

Publications (2)

Publication Number Publication Date
JPS57210682A true JPS57210682A (en) 1982-12-24
JPH04396B2 JPH04396B2 (en) 1992-01-07

Family

ID=14142754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9562781A Granted JPS57210682A (en) 1981-06-20 1981-06-20 Semiconductor laser modulating circuit

Country Status (1)

Country Link
JP (1) JPS57210682A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945542A (en) * 1989-05-31 1990-07-31 Massachusetts Institute Of Technology Laser diode modulator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144289A (en) * 1976-05-27 1977-12-01 Fujitsu Ltd Circuit for driving semiconductor laser
JPS5356985A (en) * 1976-11-02 1978-05-23 Fujitsu Ltd Light emitting element driving circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144289A (en) * 1976-05-27 1977-12-01 Fujitsu Ltd Circuit for driving semiconductor laser
JPS5356985A (en) * 1976-11-02 1978-05-23 Fujitsu Ltd Light emitting element driving circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945542A (en) * 1989-05-31 1990-07-31 Massachusetts Institute Of Technology Laser diode modulator

Also Published As

Publication number Publication date
JPH04396B2 (en) 1992-01-07

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