JPS57207866A - Potential sensor - Google Patents

Potential sensor

Info

Publication number
JPS57207866A
JPS57207866A JP9334081A JP9334081A JPS57207866A JP S57207866 A JPS57207866 A JP S57207866A JP 9334081 A JP9334081 A JP 9334081A JP 9334081 A JP9334081 A JP 9334081A JP S57207866 A JPS57207866 A JP S57207866A
Authority
JP
Japan
Prior art keywords
voltage
electrodes
electrode
measured
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9334081A
Other languages
Japanese (ja)
Inventor
Yoshitoyo Sakakibara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9334081A priority Critical patent/JPS57207866A/en
Publication of JPS57207866A publication Critical patent/JPS57207866A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/145Indicating the presence of current or voltage
    • G01R19/155Indicating the presence of voltage

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

PURPOSE:To simplify a circuit and to incorporate it into an apparatus, by making one surface of a thin dielectric whose dielectric constant is large adhere to one surface of n type or p type silicon by use of a nonconductive adhesive agent, and forming a potential sensor. CONSTITUTION:Electrodes 12, 13 are provided on each one surface of a thin dielectric 10 whose dielectric constant is large, and n type or p type silicon 11, and each surface of the opposite side of the surfaces on which said electrodes 12, 13 have been provided is made to adhere by a nonconductive adhesive agent. Also, on 2 parallel sides of the silicon 11, electrodes 14, 15 are provided. To said electrode 12, voltage to be measured is applied, and the electrode 13 is grounded. Also, a thermistor 16 for compensating temperature dependability of the silicon 11 is connected to the electrode 14, and constant voltage V is applied to the electrode 15. In this way, when constant voltage is applied to the electrodes 14, 15, a current is varied in accordance with magnitude of the voltage to be measured, and by a variation of this current, the voltage to be measured is measured.
JP9334081A 1981-06-16 1981-06-16 Potential sensor Pending JPS57207866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9334081A JPS57207866A (en) 1981-06-16 1981-06-16 Potential sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9334081A JPS57207866A (en) 1981-06-16 1981-06-16 Potential sensor

Publications (1)

Publication Number Publication Date
JPS57207866A true JPS57207866A (en) 1982-12-20

Family

ID=14079533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9334081A Pending JPS57207866A (en) 1981-06-16 1981-06-16 Potential sensor

Country Status (1)

Country Link
JP (1) JPS57207866A (en)

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