JPS57203286A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS57203286A
JPS57203286A JP56087625A JP8762581A JPS57203286A JP S57203286 A JPS57203286 A JP S57203286A JP 56087625 A JP56087625 A JP 56087625A JP 8762581 A JP8762581 A JP 8762581A JP S57203286 A JPS57203286 A JP S57203286A
Authority
JP
Japan
Prior art keywords
common
storage device
transistors
semiconductor storage
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56087625A
Other languages
Japanese (ja)
Inventor
Koichi Nishiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56087625A priority Critical patent/JPS57203286A/en
Publication of JPS57203286A publication Critical patent/JPS57203286A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate

Abstract

PURPOSE:To reduce the number of wiring lines and highly integrate a semiconductor storage device by setting the threshold of a transferring transistor of each storage part to a different value and driving the transistor through a common word line. CONSTITUTION:One of the sources and drains of respective transferring transistors T1, T2... is connected to corresponding storing parts m1, m2... and the other is connected to a bit line B in common. The gates of these transistors T1, T2... are connected to a word line W in common. The thresholds of the transistors T1, T2 are set to different values respectively to select a required storage part out of the parts m1, m2.... Since the plural memory cells are controlled by the common word line and read/written by the common bit line, the number of wiring lines is reduced and the semiconductor storage device can be highly integrated.
JP56087625A 1981-06-08 1981-06-08 Semiconductor storage device Pending JPS57203286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56087625A JPS57203286A (en) 1981-06-08 1981-06-08 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56087625A JPS57203286A (en) 1981-06-08 1981-06-08 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS57203286A true JPS57203286A (en) 1982-12-13

Family

ID=13920152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56087625A Pending JPS57203286A (en) 1981-06-08 1981-06-08 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS57203286A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715312A1 (en) * 1994-11-30 1996-06-05 STMicroelectronics S.r.l. Monolitically integrated generator of a plurality of voltage values

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715312A1 (en) * 1994-11-30 1996-06-05 STMicroelectronics S.r.l. Monolitically integrated generator of a plurality of voltage values

Similar Documents

Publication Publication Date Title
US4802122A (en) Fast flush for a first-in first-out memory
JPS6466899A (en) Memory cell
GB1181324A (en) Field-Effect Transistor Memory
KR880006837A (en) Sense Amplifiers for High Performance DRAM
EP0301588A3 (en) Semiconductor memory device
DE69122481D1 (en) Semiconductor memory with multiplex redundancy
KR870009396A (en) Nonvolatile Semiconductor Memory
EP0107387A3 (en) Semiconductor memory device
EP0361972A3 (en) Non-volatile semiconductor memory device with nand type memory cell arrays
KR900006220B1 (en) Semiconductor memory device
KR870008320A (en) Semiconductor memory device composed of different type memory cells
JPS5661088A (en) Semiconductor memory device
ATE73580T1 (en) GATE ARRAY ARRANGEMENT USING CMOS TECHNOLOGY.
IE811741L (en) Semiconductor read only memory device
JPS57176587A (en) Semiconductor ram device
JPS57203286A (en) Semiconductor storage device
JPS6396799A (en) Associative memory
US5034924A (en) Static random access memory device with pull-down control circuit
EP0322885A3 (en) Determination circuit for data coincidence
Wilson et al. A 100ns 150mW 64Kbit ROM
DE59602264D1 (en) SRAM STORAGE CELL
FR2300391A1 (en) Selective access transistor memory - is fitted with each memory cell having storage circuit memory transistor and data conservation circuit
GB1335890A (en) Associative semiconductor memory
JPS5683887A (en) Semiconductor storage device
JPS57105890A (en) Semiconductor storage device