JPS5720279B2 - - Google Patents

Info

Publication number
JPS5720279B2
JPS5720279B2 JP2076273A JP2076273A JPS5720279B2 JP S5720279 B2 JPS5720279 B2 JP S5720279B2 JP 2076273 A JP2076273 A JP 2076273A JP 2076273 A JP2076273 A JP 2076273A JP S5720279 B2 JPS5720279 B2 JP S5720279B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2076273A
Other languages
Japanese (ja)
Other versions
JPS48101381A (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS48101381A publication Critical patent/JPS48101381A/ja
Publication of JPS5720279B2 publication Critical patent/JPS5720279B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2076273A 1972-03-03 1973-02-22 Expired JPS5720279B2 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23169572A 1972-03-03 1972-03-03

Publications (2)

Publication Number Publication Date
JPS48101381A JPS48101381A (cg-RX-API-DMAC10.html) 1973-12-20
JPS5720279B2 true JPS5720279B2 (cg-RX-API-DMAC10.html) 1982-04-27

Family

ID=22870296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2076273A Expired JPS5720279B2 (cg-RX-API-DMAC10.html) 1972-03-03 1973-02-22

Country Status (5)

Country Link
US (1) US3788890A (cg-RX-API-DMAC10.html)
JP (1) JPS5720279B2 (cg-RX-API-DMAC10.html)
DE (1) DE2310117A1 (cg-RX-API-DMAC10.html)
FR (1) FR2174864B1 (cg-RX-API-DMAC10.html)
GB (1) GB1370292A (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976535A (en) * 1975-05-27 1976-08-24 Bell Telephone Laboratories, Incorporated Screening seeds for quartz growth
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
GB8325544D0 (en) * 1983-09-23 1983-10-26 Howe S H Orienting crystals
JPS61151098A (ja) * 1984-12-24 1986-07-09 Shin Etsu Chem Co Ltd タンタル酸リチウム単結晶ウエ−ハ
US4908074A (en) * 1986-02-28 1990-03-13 Kyocera Corporation Gallium arsenide on sapphire heterostructure
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
US4857415A (en) * 1987-05-29 1989-08-15 Raytheon Company Method of producing single crystalline magnetic film having bi-axial anisotropy
US5156995A (en) * 1988-04-01 1992-10-20 Cornell Research Foundation, Inc. Method for reducing or eliminating interface defects in mismatched semiconductor epilayers
US6730987B2 (en) * 2001-09-10 2004-05-04 Showa Denko K.K. Compound semiconductor device, production method thereof, light-emitting device and transistor
JP4142332B2 (ja) * 2002-04-19 2008-09-03 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶シリコンの製造方法、単結晶シリコンウェーハの製造方法、単結晶シリコン製造用種結晶、単結晶シリコンインゴットおよび単結晶シリコンウェーハ
GB0611926D0 (en) * 2006-06-16 2006-07-26 Rolls Royce Plc Welding of single crystal alloys
WO2018126326A1 (en) 2017-01-06 2018-07-12 Direct-C Limited Polymeric nanocomposite based sensor and coating systems and their applications

Also Published As

Publication number Publication date
JPS48101381A (cg-RX-API-DMAC10.html) 1973-12-20
FR2174864B1 (cg-RX-API-DMAC10.html) 1977-04-22
US3788890A (en) 1974-01-29
FR2174864A1 (cg-RX-API-DMAC10.html) 1973-10-19
GB1370292A (en) 1974-10-16
DE2310117A1 (de) 1973-09-06

Similar Documents

Publication Publication Date Title
FR2174864B1 (cg-RX-API-DMAC10.html)
FR2245837A1 (cg-RX-API-DMAC10.html)
FR2170922B1 (cg-RX-API-DMAC10.html)
JPS5241734B2 (cg-RX-API-DMAC10.html)
JPS5226196Y2 (cg-RX-API-DMAC10.html)
JPS5341626B2 (cg-RX-API-DMAC10.html)
JPS5135505Y2 (cg-RX-API-DMAC10.html)
JPS5317475Y2 (cg-RX-API-DMAC10.html)
JPS5429484Y2 (cg-RX-API-DMAC10.html)
JPS4899160A (cg-RX-API-DMAC10.html)
JPS4892076U (cg-RX-API-DMAC10.html)
JPS4940629U (cg-RX-API-DMAC10.html)
JPS4947030A (cg-RX-API-DMAC10.html)
CH566534A5 (cg-RX-API-DMAC10.html)
CH575128A5 (cg-RX-API-DMAC10.html)
CH568313A5 (cg-RX-API-DMAC10.html)
CH576696A5 (cg-RX-API-DMAC10.html)
CH572344A5 (cg-RX-API-DMAC10.html)
CH562747A5 (cg-RX-API-DMAC10.html)
CH589058A5 (cg-RX-API-DMAC10.html)
CH568085A5 (cg-RX-API-DMAC10.html)
BG18223A1 (cg-RX-API-DMAC10.html)
AU480295A (cg-RX-API-DMAC10.html)
CH559015A5 (cg-RX-API-DMAC10.html)
CH563109A5 (cg-RX-API-DMAC10.html)