JPS57195380A - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
JPS57195380A
JPS57195380A JP56079424A JP7942481A JPS57195380A JP S57195380 A JPS57195380 A JP S57195380A JP 56079424 A JP56079424 A JP 56079424A JP 7942481 A JP7942481 A JP 7942481A JP S57195380 A JPS57195380 A JP S57195380A
Authority
JP
Japan
Prior art keywords
base
power source
word line
resistance
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56079424A
Other languages
Japanese (ja)
Inventor
Shinji Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56079424A priority Critical patent/JPS57195380A/en
Publication of JPS57195380A publication Critical patent/JPS57195380A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Abstract

PURPOSE:To increase the switching speed of a decoder circuit by performing voltage division between input diodes or a transistor (TR) and a power source, and then connecting the voltage-division point to the base of a drive TR. CONSTITUTION:Decoding lines DL3 and DL4 are connected to the cathode sides of input diodes 31 and 32. The anode sides of then are connected in common and then connected to the base of a driving TR33 through a resistance 34. The base of the TR33 is connected to a Vcc power source terminal 36 through a resistance 35, and the collector is connected directly to the terminal 36. The emitter of the TR33, on the other hand, is connected to a word line WL2, which connects with a memory cell 37. When the word line WL2 has a high potential, the memory cell 37 is selected and when it has a low potential, the cell is unselected.
JP56079424A 1981-05-27 1981-05-27 Semiconductor circuit Pending JPS57195380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56079424A JPS57195380A (en) 1981-05-27 1981-05-27 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56079424A JPS57195380A (en) 1981-05-27 1981-05-27 Semiconductor circuit

Publications (1)

Publication Number Publication Date
JPS57195380A true JPS57195380A (en) 1982-12-01

Family

ID=13689475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56079424A Pending JPS57195380A (en) 1981-05-27 1981-05-27 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS57195380A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170090A (en) * 1984-02-13 1985-09-03 Hitachi Ltd Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170090A (en) * 1984-02-13 1985-09-03 Hitachi Ltd Semiconductor integrated circuit
US5311482A (en) * 1984-02-13 1994-05-10 Hitachi, Ltd. Semiconductor integrated circuit

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