JPS57193059A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS57193059A
JPS57193059A JP57075947A JP7594782A JPS57193059A JP S57193059 A JPS57193059 A JP S57193059A JP 57075947 A JP57075947 A JP 57075947A JP 7594782 A JP7594782 A JP 7594782A JP S57193059 A JPS57193059 A JP S57193059A
Authority
JP
Japan
Prior art keywords
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57075947A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0142510B2 (enrdf_load_stackoverflow
Inventor
Shiyupenke Eeberuharuto
Shiyutoia Furantsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of JPS57193059A publication Critical patent/JPS57193059A/ja
Publication of JPH0142510B2 publication Critical patent/JPH0142510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP57075947A 1981-05-08 1982-05-06 Thyristor Granted JPS57193059A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813118347 DE3118347A1 (de) 1981-05-08 1981-05-08 Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb

Publications (2)

Publication Number Publication Date
JPS57193059A true JPS57193059A (en) 1982-11-27
JPH0142510B2 JPH0142510B2 (enrdf_load_stackoverflow) 1989-09-13

Family

ID=6131827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57075947A Granted JPS57193059A (en) 1981-05-08 1982-05-06 Thyristor

Country Status (2)

Country Link
JP (1) JPS57193059A (enrdf_load_stackoverflow)
DE (1) DE3118347A1 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180166A (ja) * 1983-12-30 1985-09-13 ゼネラル・エレクトリツク・カンパニイ 改良したエミツタ領域を具備しタ−ンオフ能力を持つたサイリスタ及びその製造方法
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
JPS61125173A (ja) * 1984-11-22 1986-06-12 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
FR2568724A1 (fr) * 1984-08-03 1986-02-07 Centre Nat Rech Scient Composant semi-conducteur de puissance a tension de claquage elevee
DE3855922T2 (de) * 1987-02-26 1998-01-02 Toshiba Kawasaki Kk An-Steuertechnik für Thyristor mit isolierter Steuerelektrode
US6330388B1 (en) 1999-01-27 2001-12-11 Northstar Photonics, Inc. Method and apparatus for waveguide optics and devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235586A (en) * 1975-09-12 1977-03-18 Mitsubishi Electric Corp Semiconductor device
JPS5245288A (en) * 1975-06-19 1977-04-09 Asea Ab Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (enrdf_load_stackoverflow) * 1962-06-11
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245288A (en) * 1975-06-19 1977-04-09 Asea Ab Semiconductor device
JPS5235586A (en) * 1975-09-12 1977-03-18 Mitsubishi Electric Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180166A (ja) * 1983-12-30 1985-09-13 ゼネラル・エレクトリツク・カンパニイ 改良したエミツタ領域を具備しタ−ンオフ能力を持つたサイリスタ及びその製造方法
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
JPS61125173A (ja) * 1984-11-22 1986-06-12 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ

Also Published As

Publication number Publication date
DE3118347C2 (enrdf_load_stackoverflow) 1990-02-01
DE3118347A1 (de) 1982-11-25
JPH0142510B2 (enrdf_load_stackoverflow) 1989-09-13

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