JPS5718717B2 - - Google Patents
Info
- Publication number
- JPS5718717B2 JPS5718717B2 JP14904075A JP14904075A JPS5718717B2 JP S5718717 B2 JPS5718717 B2 JP S5718717B2 JP 14904075 A JP14904075 A JP 14904075A JP 14904075 A JP14904075 A JP 14904075A JP S5718717 B2 JPS5718717 B2 JP S5718717B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
Landscapes
- Junction Field-Effect Transistors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7441129A FR2294544A1 (fr) | 1974-12-13 | 1974-12-13 | Procede de fabrication, en circuit integre, de transistors a effet de champ destines a fonctionner en tres haute frequence, et structure ou dispositifs obtenus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5185680A JPS5185680A (https=) | 1976-07-27 |
| JPS5718717B2 true JPS5718717B2 (https=) | 1982-04-17 |
Family
ID=9146137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14904075A Expired JPS5718717B2 (https=) | 1974-12-13 | 1975-12-13 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4004341A (https=) |
| JP (1) | JPS5718717B2 (https=) |
| DE (1) | DE2556038C2 (https=) |
| FR (1) | FR2294544A1 (https=) |
| GB (1) | GB1530145A (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4214966A (en) * | 1979-03-20 | 1980-07-29 | Bell Telephone Laboratories, Incorporated | Process useful in the fabrication of articles with metallized surfaces |
| FR2461358A1 (fr) * | 1979-07-06 | 1981-01-30 | Thomson Csf | Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede |
| JPS5718324A (en) * | 1980-07-07 | 1982-01-30 | Mitsubishi Electric Corp | Method of working |
| US4325181A (en) * | 1980-12-17 | 1982-04-20 | The United States Of America As Represented By The Secretary Of The Navy | Simplified fabrication method for high-performance FET |
| US4453305A (en) * | 1981-07-31 | 1984-06-12 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Method for producing a MISFET |
| GB2133621B (en) * | 1983-01-11 | 1987-02-04 | Emi Ltd | Junction field effect transistor |
| US4692998A (en) * | 1985-01-12 | 1987-09-15 | M/A-Com, Inc. | Process for fabricating semiconductor components |
| US5006914A (en) * | 1988-12-02 | 1991-04-09 | Advanced Technology Materials, Inc. | Single crystal semiconductor substrate articles and semiconductor devices comprising same |
| DE59010851D1 (de) * | 1989-04-27 | 1998-11-12 | Max Planck Gesellschaft | Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren |
| US5385865A (en) * | 1990-04-26 | 1995-01-31 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften | Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface |
| US5185293A (en) * | 1992-04-10 | 1993-02-09 | Eastman Kodak Company | Method of forming and aligning patterns in deposted overlaying on GaAs |
| US5585655A (en) * | 1994-08-22 | 1996-12-17 | Matsushita Electric Industrial Co., Ltd. | Field-effect transistor and method of manufacturing the same |
| US6811853B1 (en) | 2000-03-06 | 2004-11-02 | Shipley Company, L.L.C. | Single mask lithographic process for patterning multiple types of surface features |
| US6627096B2 (en) | 2000-05-02 | 2003-09-30 | Shipley Company, L.L.C. | Single mask technique for making positive and negative micromachined features on a substrate |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3330696A (en) * | 1967-07-11 | Method of fabricating thin film capacitors | ||
| US3498833A (en) * | 1966-07-08 | 1970-03-03 | Fairchild Camera Instr Co | Double masking technique for integrated circuit |
| US3574010A (en) * | 1968-12-30 | 1971-04-06 | Texas Instruments Inc | Fabrication of metal insulator semiconductor field effect transistors |
| FR2104704B1 (https=) * | 1970-08-07 | 1973-11-23 | Thomson Csf | |
| JPS4839178A (https=) * | 1971-09-22 | 1973-06-08 | ||
| FR2157740B1 (https=) * | 1971-10-29 | 1976-10-29 | Thomson Csf | |
| JPS48100078A (https=) * | 1972-03-29 | 1973-12-18 | ||
| US3875656A (en) * | 1973-07-25 | 1975-04-08 | Motorola Inc | Fabrication technique for high density integrated circuits |
-
1974
- 1974-12-13 FR FR7441129A patent/FR2294544A1/fr active Granted
-
1975
- 1975-12-05 US US05/638,037 patent/US4004341A/en not_active Expired - Lifetime
- 1975-12-10 GB GB50716/75A patent/GB1530145A/en not_active Expired
- 1975-12-12 DE DE2556038A patent/DE2556038C2/de not_active Expired
- 1975-12-13 JP JP14904075A patent/JPS5718717B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1530145A (en) | 1978-10-25 |
| JPS5185680A (https=) | 1976-07-27 |
| US4004341A (en) | 1977-01-25 |
| FR2294544B1 (https=) | 1978-06-23 |
| DE2556038C2 (de) | 1983-07-28 |
| FR2294544A1 (fr) | 1976-07-09 |
| DE2556038A1 (de) | 1976-06-16 |