JPS57186130A - Pyroelectric infared-ray detector - Google Patents
Pyroelectric infared-ray detectorInfo
- Publication number
- JPS57186130A JPS57186130A JP56070688A JP7068881A JPS57186130A JP S57186130 A JPS57186130 A JP S57186130A JP 56070688 A JP56070688 A JP 56070688A JP 7068881 A JP7068881 A JP 7068881A JP S57186130 A JPS57186130 A JP S57186130A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photodetecting
- film
- coating film
- protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 abstract 6
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000011253 protective coating Substances 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Landscapes
- Radiation Pyrometers (AREA)
Abstract
PURPOSE:To raise adhesion of a photodetecting electrode and to obtain a device having less change of properties and high reliability, by disposing a protective coating film such as a thin organic coating film or the like on a surface of a pyroelectric material, at least on the electrode. CONSTITUTION:In a receptacle which keeps a constant atomosphere and supports window materials, a photodetecting electrode made of a thin metallic coating film and a pyroelectric material which is provided with the counter electrode and adhered a protective coating film such as a thin organic film or the like at least on the photodetecting electrode, are housed. A nickel-chromium film is formed on all the surface of a rear side of the pyroelectric material 6 consisting of e.g. LTa3 Z-cut wafer to obtain the counter electrode 7. Then, a hollow silicon supporting base 8 is adhered to the material 6 with a conductive adhesive. As a photodetecting electrode 10 on a photodetecting surface on a surface of the material 6, e.g. a nickel-chromium film is selected and vapor-deposited, and Al for wiring 11 is selected and vapor-deposited adjacently to the electrode 10. After applying e.g. a resist as a protective film 12 to all the surface, Al for wiring 11 is exposed by photoetching and the wafer is divided into chips after a photodetecting part is arranged to be protective.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070688A JPS57186130A (en) | 1981-05-13 | 1981-05-13 | Pyroelectric infared-ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070688A JPS57186130A (en) | 1981-05-13 | 1981-05-13 | Pyroelectric infared-ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57186130A true JPS57186130A (en) | 1982-11-16 |
Family
ID=13438825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56070688A Pending JPS57186130A (en) | 1981-05-13 | 1981-05-13 | Pyroelectric infared-ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57186130A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50134684A (en) * | 1974-04-10 | 1975-10-24 |
-
1981
- 1981-05-13 JP JP56070688A patent/JPS57186130A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50134684A (en) * | 1974-04-10 | 1975-10-24 |
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