JPS57185718A - Electronic controlled variable phase shift device with long gate field effect transistor and circuit using same device - Google Patents

Electronic controlled variable phase shift device with long gate field effect transistor and circuit using same device

Info

Publication number
JPS57185718A
JPS57185718A JP57071633A JP7163382A JPS57185718A JP S57185718 A JPS57185718 A JP S57185718A JP 57071633 A JP57071633 A JP 57071633A JP 7163382 A JP7163382 A JP 7163382A JP S57185718 A JPS57185718 A JP S57185718A
Authority
JP
Japan
Prior art keywords
circuit
phase shift
field effect
effect transistor
controlled variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57071633A
Other languages
English (en)
Japanese (ja)
Inventor
Deiamondo Fueritsukusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS57185718A publication Critical patent/JPS57185718A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/16—Networks for phase shifting
    • H03H11/20—Two-port phase shifters providing an adjustable phase shift

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Networks Using Active Elements (AREA)
JP57071633A 1981-04-30 1982-04-30 Electronic controlled variable phase shift device with long gate field effect transistor and circuit using same device Pending JPS57185718A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8108664A FR2505092A1 (fr) 1981-04-30 1981-04-30 Dispositif de dephasage variable, a commande electronique, comportant un transistor a effet de champ a grille longue et circuit d'utilisation d'un tel dispositif

Publications (1)

Publication Number Publication Date
JPS57185718A true JPS57185718A (en) 1982-11-16

Family

ID=9257959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57071633A Pending JPS57185718A (en) 1981-04-30 1982-04-30 Electronic controlled variable phase shift device with long gate field effect transistor and circuit using same device

Country Status (5)

Country Link
US (1) US4450372A (OSRAM)
EP (1) EP0064905B1 (OSRAM)
JP (1) JPS57185718A (OSRAM)
DE (1) DE3260089D1 (OSRAM)
FR (1) FR2505092A1 (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550889B1 (fr) * 1983-08-17 1985-10-11 Thomson Csf Dispositif amplificateur a effet de champ, fonctionnant dans les hyperfrequences, par transfert d'electrons
US4647789A (en) * 1984-09-14 1987-03-03 Rca Corporation Active element microwave phase shifter
FR2575346B1 (fr) * 1984-12-21 1987-01-16 Thomson Csf Dephaseur hyperfrequence a commande electronique
US5093667A (en) * 1989-10-16 1992-03-03 Itt Corporation T/R module with error correction
US5039959A (en) * 1990-09-20 1991-08-13 Rockwell International Corporation Phase switching circuit
JP2003007976A (ja) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp 半導体装置及びモジュール装置
US10686487B2 (en) * 2015-06-23 2020-06-16 Eridan Communications, Inc. Universal transmit/receive module for radar and communications

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3254231A (en) * 1962-07-10 1966-05-31 Philco Corp Frequency changer employing a moving sonic-energy-reflecting boundary in a semiconductor medium
US3313952A (en) * 1963-10-25 1967-04-11 Cons Electronics Ind Phase sensitive switching element
US3716730A (en) * 1971-04-19 1973-02-13 Motorola Inc Intermodulation rejection capabilities of field-effect transistor radio frequency amplifiers and mixers
US3727078A (en) * 1972-03-30 1973-04-10 Nat Semiconductor Corp Integrated circuit balanced mixer apparatus

Also Published As

Publication number Publication date
FR2505092B1 (OSRAM) 1984-03-16
EP0064905A1 (fr) 1982-11-17
US4450372A (en) 1984-05-22
FR2505092A1 (fr) 1982-11-05
EP0064905B1 (fr) 1984-04-04
DE3260089D1 (en) 1984-05-10

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