JPS57178395A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57178395A
JPS57178395A JP56063308A JP6330881A JPS57178395A JP S57178395 A JPS57178395 A JP S57178395A JP 56063308 A JP56063308 A JP 56063308A JP 6330881 A JP6330881 A JP 6330881A JP S57178395 A JPS57178395 A JP S57178395A
Authority
JP
Japan
Prior art keywords
optical pulse
period
generated
single longitudinal
longitudinal mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56063308A
Other languages
Japanese (ja)
Other versions
JPS623998B2 (en
Inventor
Seigo Taruchiya
Kenjiyu Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56063308A priority Critical patent/JPS57178395A/en
Publication of JPS57178395A publication Critical patent/JPS57178395A/en
Publication of JPS623998B2 publication Critical patent/JPS623998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To reduce the degradation of a waveform based on the dispersion of wavelength of an optical fiber and the effect of the noises of the distribution of a mode by injecting currents having a periodical waveform such as a sine wave having frequency twice as many as the repetition of an optical pulse to a semiconductor laser medium. CONSTITUTION:The optical pulse of the repetition of the half of modulation frequency is generated through the current modulation of frequency approximately twice as many as the generation of the optical pulse. Accordingly, weak stationary single longitudinal mode beams are generated for the first period while the optical pulse is generated for the second period, the same action as external beam injection synchronism is conducted by the single longitudinal mode beams for the first period, and the optical pulse for the second period is changed into a single longitudinal mode. As a necessary condition for obtaining such oscillation, the variation of carrier density must be controlled by currents to be injected, and the weak but stationary single longitudinal mode beams must be generated just before generating the optical pulse.
JP56063308A 1981-04-28 1981-04-28 Semiconductor laser device Granted JPS57178395A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56063308A JPS57178395A (en) 1981-04-28 1981-04-28 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56063308A JPS57178395A (en) 1981-04-28 1981-04-28 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS57178395A true JPS57178395A (en) 1982-11-02
JPS623998B2 JPS623998B2 (en) 1987-01-28

Family

ID=13225521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56063308A Granted JPS57178395A (en) 1981-04-28 1981-04-28 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57178395A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62205680A (en) * 1986-03-06 1987-09-10 Nec Corp Semiconductor laser light source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62205680A (en) * 1986-03-06 1987-09-10 Nec Corp Semiconductor laser light source

Also Published As

Publication number Publication date
JPS623998B2 (en) 1987-01-28

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