JPS62205680A - Semiconductor laser light source - Google Patents
Semiconductor laser light sourceInfo
- Publication number
- JPS62205680A JPS62205680A JP4919386A JP4919386A JPS62205680A JP S62205680 A JPS62205680 A JP S62205680A JP 4919386 A JP4919386 A JP 4919386A JP 4919386 A JP4919386 A JP 4919386A JP S62205680 A JPS62205680 A JP S62205680A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- wavelength
- temperature
- output
- laser element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 230000010355 oscillation Effects 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 abstract description 21
- 230000003287 optical effect Effects 0.000 abstract description 15
- 238000005259 measurement Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035922 thirst Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06821—Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
Abstract
Description
【発明の詳細な説明】
炎亙光１
本発明Ｃま半導体レーザ光源に関し、特に光フアイバケ
ーブルの波長分散特性を測定するための測定用光源に用
いられる半導体レーザ光源に関するものである。DETAILED DESCRIPTION OF THE INVENTION Flame Light 1 The present invention relates to a semiconductor laser light source, and particularly relates to a semiconductor laser light source used as a measurement light source for measuring wavelength dispersion characteristics of an optical fiber cable.
従来技術
一般に、光通イハ用ファイバケーブル（以下光ケーブル
と略記する）の伝送特性としては、伝送１０失及び分散
特性が主たるものであり、このうら分散待１１には、モ
ード分散特性と波長分散特性の２種類があり、甲−七−
ド光ケーブルでは、後者の波長分散１）性のみを考慮ず
れば良い。特に甲−モード光ケーブルを用いて広帯域か
つ長距離の伝送を実現する場合、光送信装置の発光スペ
クトラム幅の広がり及び波長分散により伝送距離やその
伝送容（ｄ（ビットレート）が制限されるので、波長分
散特性の測定は組型となる。Prior Art In general, the transmission characteristics of fiber cables for optical communication (hereinafter abbreviated as optical cables) are mainly transmission loss and dispersion characteristics. There are two types:
For optical fiber cables, only the latter chromatic dispersion (1) needs to be considered. In particular, when achieving broadband and long-distance transmission using A-mode optical cables, the transmission distance and transmission capacity (d (bit rate)) are limited by the spread of the emission spectrum width and wavelength dispersion of the optical transmitter. The measurement of wavelength dispersion characteristics is a set type.
かかる波長分散特性の測定には、互いに異なった波長を
右する複数個のレーザ光源を用いるかり１やランン法等
による方法が用いられている。これ等の方法Ｃは、波長
分散の波長特性を求めることがＣさ゛るが、構成が複雑
となるために装置の大型化及び高価格化の要因となって
いる。To measure such chromatic dispersion characteristics, methods such as the Kari 1 method and the run method using a plurality of laser light sources emitting mutually different wavelengths are used. These methods C require the determination of the wavelength characteristic of chromatic dispersion, but the configuration is complicated, which is a factor in increasing the size and price of the apparatus.
また、光ケーブルにおいて通常使用される波長にＪ３け
る波長分散特性のみを求めノζいという要求のある場合
ら多いが、かかる場合には、簡単な測定装量の構成が必
要となり前述の方法は適当ではない。Additionally, there are many cases where there is a requirement to obtain only the chromatic dispersion characteristics at wavelengths commonly used in optical cables, and in such cases, a simple configuration of measurement equipment is required and the above method is not appropriate. isn't it.
発明の目的
本発明の目的は、１個の半導体レーザ索子を用いるのみ
で光ケーブルの波長分散特性を簡便にかつ低価格にて測
定可能な半導体レーザ光源を提供することである。OBJECTS OF THE INVENTION An object of the present invention is to provide a semiconductor laser light source that allows the wavelength dispersion characteristics of an optical cable to be measured simply and at low cost by using only one semiconductor laser cable.
発明の構成
本発明による半導体レーｔＪ’光源は、甲−軸モード発
振半導体レーザ素子と、所定周波数の正弦波により前記
半導体レーザ素子の出力光を振幅変調する変調手段と、
前記半導体レーザ素子の動作温度を可変制御する温度制
御手段どを右することを特徴としている。Structure of the Invention The semiconductor laser tJ' light source according to the present invention includes: a semiconductor laser device that oscillates in the A-axis mode; a modulator that amplitude-modulates the output light of the semiconductor laser device using a sine wave of a predetermined frequency;
The present invention is characterized in that the temperature control means for variably controlling the operating temperature of the semiconductor laser element is controlled.
実施例
以下、本発明の実施例につき述べるが、その前に波長分
散特性の測定につき説明する。EXAMPLES Below, examples of the present invention will be described, but first, measurement of wavelength dispersion characteristics will be explained.
波長分散特性りは、光の波長をλ（ｎｍ）光クープルの
単位長（ＩＫｍ＞当りの遅延時間をｔ（ｐｓ／Ｋｌ）と
すると、以下の式にて表わされる。The wavelength dispersion characteristic is expressed by the following equation, where the wavelength of light is λ (nm) and the delay time per unit length of optical couple (IKm>) is t (ps/Kl).
Ｄ＝ｄ ｔ／ｄλ ・・・・・・（１
）当３（１）式から分る様に、波長分散特性は光の波長
λの関数となり、遅延時間ｔの波長特性を求めろことに
Ｊ、りその波長特性の微分として１ｒすることができる
ことになる。ここで、遅延ｌ）間ｔは、１Ｉｌｌｌ定用
光源を周波数ｆの正弦波により振幅変調しつつ二′１該
光源の波長を変化させた場合にお１プる上記正弦波の位
相変化△φによって次式で求めることがＣさる。D=d t/dλ (1
) As can be seen from equation 3 (1), the chromatic dispersion characteristic is a function of the wavelength λ of light, and the wavelength characteristic of the delay time t can be calculated as J, and 1r as the differential of the wavelength characteristic. become. Here, the delay l) is the phase change △φ of the sine wave that is 1 when the wavelength of the light source is changed while modulating the amplitude of the 1Illll constant light source with a sine wave of frequency f. Therefore, C can be calculated using the following formula.
Δ１−（△φ／２π「）・（１／ Ｌ ）・・・・・・
（２）（２）式にＪ３いて、しは光ケーブルｆｕ（Ｋｍ
）（’ある。通常は光源の波長を数種類変化させて（２
）式からΔｔを求め、このΔしの式におＧＪる近似にに
って波長分散特性を求めるものである。Δ1−(Δφ/2π”)・(1/L)・・・・・・
(2) In equation (2), J3 is used, and optical cable fu (Km
) ('Yes. Usually, by changing several wavelengths of the light source (2
) is used to find Δt, and the chromatic dispersion characteristic is found by approximating this Δt equation.
これに対し、光源の中心波長λ０にＪ３ける波長分散Ｄ
（λ０）を簡便に求めるために、測定用光源の波長を２
０に対して±Δλだけ変化さけ、その場合の光ケーブル
出力での変調正弦波周波数ｒにおりる位相差±Δφを測
定して、波長分散特性を求めることができることになる
。On the other hand, the chromatic dispersion D at J3 at the center wavelength λ0 of the light source
(λ0), the wavelength of the measurement light source is set to 2.
By avoiding a change of ±Δλ with respect to 0, and measuring the phase difference ±Δφ at the modulated sine wave frequency r at the output of the optical cable in that case, the chromatic dispersion characteristic can be determined.
かかる知見に基づいＵ４９られたのが、第１図に示した
本弁明の実施例の波長分散測定用半導体レーリ゛光源で
ある。図にＪ３いて、単一軸Ｕ−ド発振半導体レーザ素
子１は光モニタ回路３により光出力がモニタされており
、このモニタ出力によりバイアス制御回路２が動作して
半導体レーザ素子１のバイアスが制御され、よってレー
ザ出力の安定化が図られている。Based on this knowledge, U49 was developed to create a semiconductor ray light source for wavelength dispersion measurement according to an embodiment of the present invention shown in FIG. At J3 in the figure, the optical output of the single-axis U-doped oscillation semiconductor laser device 1 is monitored by the optical monitor circuit 3, and the bias control circuit 2 is activated by this monitor output to control the bias of the semiconductor laser device 1. Therefore, the laser output is stabilized.
周波数ｆの正弦波１０がインタフェース回路９を介して
半導体レーザ索子１へ供給されでＪ′３つ、これにより
レーザ光出力は当該正弦波により振幅変調を受けること
になる。半導体レーザ素子１は熱遮蔽機構８によって閉
塞された空間内に配設されており、この閉塞空間内にお
ける温度がベルチェ素子を用いたサーモエレクトリック
クーラ４にＪ二り制御自在となっている。このサーモエ
レクトリッククーラ４はその印加直流電流の大きさや方
向を外部指令により制御することにより、発熱及び冷７
ＪＩ機能をなすことができるものである。そのために、
外部指令７及び温度センサ５のセンサ出力を入力とする
温度制御回路６が設けられている。A sine wave 10 of frequency f is supplied to the semiconductor laser probe 1 via the interface circuit 9, and the laser light output is amplitude-modulated by the sine wave. The semiconductor laser element 1 is disposed in a space closed by a heat shielding mechanism 8, and the temperature in this closed space can be controlled by a thermoelectric cooler 4 using a Vertier element. This thermoelectric cooler 4 can generate heat and cool down by controlling the magnitude and direction of the applied DC current by external commands.
It is capable of performing JI functions. for that,
A temperature control circuit 6 is provided which receives an external command 7 and a sensor output from the temperature sensor 5 as input.
外部指令７による設定温度と温度センサ５による閉塞空
間内の検出温度とが比較され、この差に応じてり一七ル
り１〜リツククーラ４が作動して、外部指令７による設
定調度に当該閉塞空間内温度（リイＣわ”） ’ｔｉ導
体レーしＦ素子１の動ｆｌ温度）を設定するのである。The temperature set by the external command 7 and the temperature detected in the closed space by the temperature sensor 5 are compared, and according to this difference, the risk coolers 1 to 4 are operated to adjust the temperature set by the external command 7. The temperature in the space (the dynamic temperature of the conductor and the F element 1) is set.
こう・ｊることにより、外部指令７によって）半導体レ
ーリ゛素子１の動作温度を制御しＣ出力レーザ光の波長
をλθ±Δλとすることが可能となり、上述した波長分
散特性の測定ができることになるのである。By doing this, it becomes possible to control the operating temperature of the semiconductor Rayleigh element 1 (by the external command 7) and set the wavelength of the C output laser beam to λθ±Δλ, making it possible to measure the wavelength dispersion characteristics described above. It will become.
ここで、一般に半導体レーザ素子１の波長の温度変化ｉ
？ｈ ＧＥＬ Ｏ１５〜１Δ／’Ｃ程度であり、この賄
は予め（１４成されているものどする。゛ト導体レーザ
索子１の動作温度変化を±５℃とすると、その波長変化
は±５へとなり、この場合の中心波長１゜５５μｍでの
測定結果は以下の如くなる。Here, in general, the temperature change i in the wavelength of the semiconductor laser element 1
? h GEL O is about 15~1Δ/'C, and this compensation has been made in advance (14).If the operating temperature change of the conductive laser cable 1 is ±5°C, the wavelength change is ±5°C. In this case, the measurement results at a center wavelength of 1°55 μm are as follows.
変調周波ｅ、 ｆ＝２００Ｈｌｌｚ尤ケーブル艮
Ｌ＝５０Ｋｍ
位相変化Ｇ ±Δφ−３２，４゜
波長分散 Ｄ ＝ １８ ｐｓ／Ｋｍ／ｎｍ尚、通
常の光ケーブルの長波長域（１〜１．６μｍ＞での波長
分散りは２０ ｐｓ／Ｋｍ／ｎｍ以下であり、よって本
発明の実施例による測定用光源にで測定したＤ６白は妥
当なものといえる。Modulation frequency e, f=200Hllz and cable length
L=50Km Phase change G ±Δφ−32.4° Wavelength dispersion D = 18 ps/Km/nm In addition, the wavelength dispersion in the long wavelength range (1 to 1.6 μm> of normal optical cables is 20 ps/Km/ nm or less, and therefore, the D6 white measured using the measurement light source according to the embodiment of the present invention can be said to be appropriate.
半導体レーザ素子１としては、多軸モードのものを用い
た場合、発光スペクトラムの変動が人さく、安定にその
波長を微小変化させることは困難であり、よって甲−軸
モードのものを用いるのが好適であり、例えば分布帰還
形半導体レーｊＪ”ｉ子等を用いることができる。When a multi-axis mode semiconductor laser element 1 is used, the fluctuation of the emission spectrum is noticeable and it is difficult to stably change the wavelength minutely, so it is preferable to use a multi-axis mode semiconductor laser element 1. It is suitable, and for example, a distributed feedback semiconductor laser jJ''i element or the like can be used.
発明の効果
以上述べた如く、本発明によれば、動作湿度の制御によ
り半導体レー豪ア素子の発光中心波長を設定するように
して、比較的筒中な構成で光ケーブルの波長分散を測定
することかできるという効果がある。Effects of the Invention As described above, according to the present invention, the wavelength dispersion of an optical cable can be measured with a relatively compact configuration by setting the emission center wavelength of a semiconductor laser element by controlling the operating humidity. There is an effect that it can be done.
第１図は本発明の実施例の構成図である。
主要部分の符号の説明
１・・・・・・半導体レー’ｆ累子
４・・・・・・サーモエレクトリッククーラ５ ・・・
・・・ 渇 １覚 し ン （す６・・・・・・温度
制御回路FIG. 1 is a block diagram of an embodiment of the present invention. Explanation of symbols of main parts 1... Semiconductor relay 'f' resistor 4... Thermoelectric cooler 5...
...Thirst 1. (S6...Temperature control circuit)
Claims (1)
弦波により前記半導体レーザ素子の出力光を振幅変調す
る変調手段と、前記半導体レーザ素子の動作温度を可変
制御する温度制御手段とを有することを特徴とする半導
体レーザ光源。It is characterized by having a single-axis mode oscillation semiconductor laser element, a modulation means for amplitude modulating the output light of the semiconductor laser element with a sine wave of a predetermined frequency, and a temperature control means for variably controlling the operating temperature of the semiconductor laser element. A semiconductor laser light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4919386A JPS62205680A (en) | 1986-03-06 | 1986-03-06 | Semiconductor laser light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4919386A JPS62205680A (en) | 1986-03-06 | 1986-03-06 | Semiconductor laser light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62205680A true JPS62205680A (en) | 1987-09-10 |
Family
ID=12824175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4919386A Pending JPS62205680A (en) | 1986-03-06 | 1986-03-06 | Semiconductor laser light source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62205680A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178395A (en) * | 1981-04-28 | 1982-11-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| JPS57210685A (en) * | 1981-06-19 | 1982-12-24 | Toshiba Corp | Wavelength selecting laser |
| JPS59204292A (en) * | 1983-05-06 | 1984-11-19 | Canon Inc | Semiconductor device |
-
1986
- 1986-03-06 JP JP4919386A patent/JPS62205680A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178395A (en) * | 1981-04-28 | 1982-11-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| JPS57210685A (en) * | 1981-06-19 | 1982-12-24 | Toshiba Corp | Wavelength selecting laser |
| JPS59204292A (en) * | 1983-05-06 | 1984-11-19 | Canon Inc | Semiconductor device |
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