JPS57175795A - Device and method for crystal growth - Google Patents

Device and method for crystal growth

Info

Publication number
JPS57175795A
JPS57175795A JP57050879A JP5087982A JPS57175795A JP S57175795 A JPS57175795 A JP S57175795A JP 57050879 A JP57050879 A JP 57050879A JP 5087982 A JP5087982 A JP 5087982A JP S57175795 A JPS57175795 A JP S57175795A
Authority
JP
Japan
Prior art keywords
crystal growth
growth
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57050879A
Other languages
English (en)
Inventor
Esu Tairaa Aaron
Ii Howaito Baanon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Tyco Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Tyco Solar Energy Corp filed Critical Mobil Tyco Solar Energy Corp
Publication of JPS57175795A publication Critical patent/JPS57175795A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP57050879A 1981-03-30 1982-03-29 Device and method for crystal growth Pending JPS57175795A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/248,838 US4390505A (en) 1981-03-30 1981-03-30 Crystal growth apparatus

Publications (1)

Publication Number Publication Date
JPS57175795A true JPS57175795A (en) 1982-10-28

Family

ID=22940899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57050879A Pending JPS57175795A (en) 1981-03-30 1982-03-29 Device and method for crystal growth

Country Status (10)

Country Link
US (1) US4390505A (ja)
JP (1) JPS57175795A (ja)
AU (1) AU544068B2 (ja)
CA (1) CA1183761A (ja)
DE (1) DE3210833A1 (ja)
FR (1) FR2502650A1 (ja)
GB (1) GB2095575B (ja)
IL (1) IL65130A (ja)
IN (1) IN157694B (ja)
NL (1) NL8201069A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007532458A (ja) * 2004-04-08 2007-11-15 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 単結晶及びその作製方法
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4544528A (en) * 1981-08-03 1985-10-01 Mobil Solar Energy Corporation Apparatus for growing tubular crystalline bodies
US4944925A (en) * 1985-06-10 1990-07-31 Sumitomo Electric Industries, Ltd. Apparatus for producing single crystals
US4721688A (en) * 1986-09-18 1988-01-26 Mobil Solar Energy Corporation Method of growing crystals
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
JP2720262B2 (ja) * 1992-10-26 1998-03-04 科学技術振興事業団 単結晶引上げ装置
US20110155045A1 (en) * 2007-06-14 2011-06-30 Evergreen Solar, Inc. Controlling the Temperature Profile in a Sheet Wafer
CN102124150B (zh) * 2008-08-18 2013-07-31 长青太阳能股份有限公司 控制气载污染物跨晶带表面的转移
CN103898598B (zh) * 2012-12-29 2016-08-10 富泰华精密电子（郑州）有限公司 晶体生长装置
TWI529265B (zh) * 2013-03-15 2016-04-11 聖高拜陶器塑膠公司 以斜角熱遮板製造藍寶石薄片之裝置及方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
FR1417761A (fr) * 1963-12-18 1965-11-12 Siemens Ag Procédé pour le traitement d'un corps semi-conducteur par la méthode de fusion par zone et dispositif pour la mise en oeuvre du procédé
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
DE1769860A1 (de) * 1968-07-26 1971-11-11 Siemens Ag Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben
US3977934A (en) * 1975-01-02 1976-08-31 Motorola, Inc. Silicon manufacture
US4116641A (en) * 1976-04-16 1978-09-26 International Business Machines Corporation Apparatus for pulling crystal ribbons from a truncated wedge shaped die
DE2700994C2 (de) * 1976-04-16 1986-02-06 International Business Machines Corp., Armonk, N.Y. Verfahren und Vorrichtung zum Ziehen von kristallinen Siliciumkörpern
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4248645A (en) * 1978-09-05 1981-02-03 Mobil Tyco Solar Energy Corporation Method for reducing residual stresses in crystals
US4271129A (en) * 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007532458A (ja) * 2004-04-08 2007-11-15 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 単結晶及びその作製方法
JP2010229030A (ja) * 2004-04-08 2010-10-14 Saint-Gobain Ceramics & Plastics Inc 単結晶及びその作製方法
US8157913B2 (en) 2004-04-08 2012-04-17 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a sapphire single crystal
USRE43469E1 (en) 2004-04-08 2012-06-12 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US8685161B2 (en) 2004-04-08 2014-04-01 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a sapphire crystal using a melt fixture including thermal shields having a stepped configuration
US9926645B2 (en) 2004-04-08 2018-03-27 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a single crystal sheet using a die having a thermal gradient along its length
US9963800B2 (en) 2004-04-08 2018-05-08 Saint-Gobain Ceramics & Plastics, Inc. Method of making a sapphire component including machining a sapphire single crystal
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Also Published As

Publication number Publication date
US4390505A (en) 1983-06-28
FR2502650A1 (fr) 1982-10-01
IN157694B (ja) 1986-05-17
DE3210833A1 (de) 1982-10-07
GB2095575B (en) 1984-09-26
NL8201069A (nl) 1982-10-18
IL65130A (en) 1984-11-30
AU8069082A (en) 1982-10-07
CA1183761A (en) 1985-03-12
IL65130A0 (en) 1982-04-30
GB2095575A (en) 1982-10-06
AU544068B2 (en) 1985-05-16

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