JPS57174446A - Manufacture of thin nitride film - Google Patents
Manufacture of thin nitride filmInfo
- Publication number
- JPS57174446A JPS57174446A JP56060431A JP6043181A JPS57174446A JP S57174446 A JPS57174446 A JP S57174446A JP 56060431 A JP56060431 A JP 56060431A JP 6043181 A JP6043181 A JP 6043181A JP S57174446 A JPS57174446 A JP S57174446A
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- substrate
- liq
- laser beams
- pulsed laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 14
- 229910052757 nitrogen Inorganic materials 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 6
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/40—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using liquids, e.g. salt baths, liquid suspensions
- C23C8/42—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using liquids, e.g. salt baths, liquid suspensions only one element being applied
- C23C8/48—Nitriding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/40—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using liquids, e.g. salt baths, liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/40—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using liquids, e.g. salt baths, liquid suspensions
- C23C8/42—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using liquids, e.g. salt baths, liquid suspensions only one element being applied
- C23C8/48—Nitriding
- C23C8/50—Nitriding of ferrous surfaces
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To form a thin nitride film having a phase stable at high temp. on the surface of a substrate by immersing the substrate in a nitrogen medium and irradiating pulsed laser beams to the substrate surface through the medium to react the surface with nitrogen. CONSTITUTION:A substrate 4 to be nitrided is mounted on a table 5 in a liq. nitrogen container 2, and pulsed laser beams are irradiated to the substrate 4 surface from a laser beam generator 1 through liq. nitrogen 3. The pulsed laser beams are selected so that they pass through the nitrogen 3, and for example, the wavelengths are regulated to about 0.4-11mum. By irradiating laser beams for a short time, the temp. of the substrate 4 surface rises at a very high rising rate, the surface is melted and reacts with liq. nitrogen 3 contacting with the surface, and nitride is formed from the surface toward the interior. The reacted part cools by self-diffusion of heat and is kept at low temp. by the surrounding liq. nitrogen 3, and the cooling is accelerated to rapidly cool the reacted part.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56060431A JPS57174446A (en) | 1981-04-20 | 1981-04-20 | Manufacture of thin nitride film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56060431A JPS57174446A (en) | 1981-04-20 | 1981-04-20 | Manufacture of thin nitride film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57174446A true JPS57174446A (en) | 1982-10-27 |
Family
ID=13142041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56060431A Pending JPS57174446A (en) | 1981-04-20 | 1981-04-20 | Manufacture of thin nitride film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57174446A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61261465A (en) * | 1985-05-16 | 1986-11-19 | Natl Res Inst For Metals | Manufacture of compound superconductor |
JPS62142757A (en) * | 1985-12-17 | 1987-06-26 | Seiko Instr & Electronics Ltd | Decorative article |
JPS63245975A (en) * | 1987-04-01 | 1988-10-13 | Semiconductor Energy Lab Co Ltd | Superconductor device |
EP1329533A1 (en) * | 2002-01-22 | 2003-07-23 | Federal-Mogul Nürnberg GmbH | Lasernitriding of aluminium-based composites |
-
1981
- 1981-04-20 JP JP56060431A patent/JPS57174446A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61261465A (en) * | 1985-05-16 | 1986-11-19 | Natl Res Inst For Metals | Manufacture of compound superconductor |
JPH0453048B2 (en) * | 1985-05-16 | 1992-08-25 | Kagaku Gijutsucho Kinzoku Zairyo Gijutsu Kenkyu Shocho | |
JPS62142757A (en) * | 1985-12-17 | 1987-06-26 | Seiko Instr & Electronics Ltd | Decorative article |
JPS63245975A (en) * | 1987-04-01 | 1988-10-13 | Semiconductor Energy Lab Co Ltd | Superconductor device |
EP1329533A1 (en) * | 2002-01-22 | 2003-07-23 | Federal-Mogul Nürnberg GmbH | Lasernitriding of aluminium-based composites |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3527198A (en) | Method and apparatus for working diamonds by means of laser light beam | |
US3420719A (en) | Method of making semiconductors by laser induced diffusion | |
KR880006809A (en) | Laser Marking Method | |
EP0128401A3 (en) | Additive or subtractive chemical process | |
Ready | Material processing—An overview | |
JPS57174446A (en) | Manufacture of thin nitride film | |
US5066515A (en) | Artificial diamond forming method | |
JPS56105479A (en) | Pattern formation method | |
JPS55132045A (en) | Nitride film forming method | |
Hamilton et al. | Hole drilling studies with a variable pulse length CO2 laser | |
JPS62164610A (en) | Solid powdery cosmetic and production thereof | |
JPS56126914A (en) | Manufacture of semiconductor device | |
Haun | Laser applications | |
JPS5460590A (en) | Laser oscillator | |
JPS5352354A (en) | Semiconductor local heating method | |
JPS5640238A (en) | Doping of impurity on semiconductor substrate | |
JPS54107673A (en) | Manufacture for semiconductor device | |
Andrew et al. | Formation of CdO and Cu2O Films by Laser Irradiation of the Corresponding Metallic Films in Air | |
KOVALENKO | Some aspects of the increase in reliability and maintainability of the components and tools using laser hardening technology | |
US3794844A (en) | Method and means of construction of a semiconductor material for use in a laser | |
Eden | Laser technology: Theory and operating principles: Application of the principles of quantum electronics has yielded hundreds of lasers whose wavelengths span from the infrared to the X-ray region of the spectrum | |
JPS6478695A (en) | Method for cutting raw film of polishing film | |
HEITMAN | Photoluminescence study of laser interaction with GaAs[M. S. Thesis] | |
JPS5211781A (en) | Integrated circuit | |
Dorozhkin et al. | The Influence of the Laser Treatment Conditions on the Hardened Layer Quality |