JPS57173201A - High frequency circuit network - Google Patents

High frequency circuit network

Info

Publication number
JPS57173201A
JPS57173201A JP57048796A JP4879682A JPS57173201A JP S57173201 A JPS57173201 A JP S57173201A JP 57048796 A JP57048796 A JP 57048796A JP 4879682 A JP4879682 A JP 4879682A JP S57173201 A JPS57173201 A JP S57173201A
Authority
JP
Japan
Prior art keywords
high frequency
frequency circuit
circuit network
network
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57048796A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0150122B2 (enExample
Inventor
Ayasuri Yarushin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of JPS57173201A publication Critical patent/JPS57173201A/ja
Publication of JPH0150122B2 publication Critical patent/JPH0150122B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/18Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling, i.e. distributed amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605Distributed amplifiers
    • H03F3/607Distributed amplifiers using FET's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57048796A 1981-03-26 1982-03-26 High frequency circuit network Granted JPS57173201A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24767881A 1981-03-26 1981-03-26

Publications (2)

Publication Number Publication Date
JPS57173201A true JPS57173201A (en) 1982-10-25
JPH0150122B2 JPH0150122B2 (enExample) 1989-10-27

Family

ID=22935881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57048796A Granted JPS57173201A (en) 1981-03-26 1982-03-26 High frequency circuit network

Country Status (3)

Country Link
JP (1) JPS57173201A (enExample)
DE (1) DE3211239C2 (enExample)
GB (2) GB2095945B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0156585A3 (en) * 1984-03-21 1987-03-25 Plessey Overseas Limited Travelling-wave field-effect transistor
US4543535A (en) * 1984-04-16 1985-09-24 Raytheon Company Distributed power amplifier
US4939485A (en) * 1988-12-09 1990-07-03 Varian Associates, Inc. Microwave field effect switch
FR2697698A1 (fr) * 1992-11-04 1994-05-06 Philips Electronique Lab Dispositif semiconducteur comprenant un circuit amplificateur distribué monolithiquement intégré, à large bande et fort gain.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298591B (de) * 1967-12-11 1969-07-03 Schlumberger Overseas Anordnung fuer die wahlweise Anschaltung einer von mehreren Signalquellen an gemeinsame Ausgangsklemmen
CH467556A (de) * 1967-12-29 1969-01-15 Ibm Mikrowellengenerator
FR2443765A1 (fr) * 1978-12-05 1980-07-04 Thomson Csf Amplificateur distribue pour hyperfrequences et dispositif d'amplification comportant un tel amplificateur

Also Published As

Publication number Publication date
JPH0150122B2 (enExample) 1989-10-27
GB2095945A (en) 1982-10-06
GB8423660D0 (en) 1984-10-24
DE3211239A1 (de) 1982-11-18
DE3211239C2 (de) 1994-07-14
GB2146195A (en) 1985-04-11
GB2095945B (en) 1986-02-26

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