JPS5717137A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5717137A
JPS5717137A JP9244180A JP9244180A JPS5717137A JP S5717137 A JPS5717137 A JP S5717137A JP 9244180 A JP9244180 A JP 9244180A JP 9244180 A JP9244180 A JP 9244180A JP S5717137 A JPS5717137 A JP S5717137A
Authority
JP
Japan
Prior art keywords
coupling agent
substrate
semiconductor chip
nitrogen
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9244180A
Other languages
Japanese (ja)
Inventor
Yuzo Kanegae
Torahiko Ando
Hiroshi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9244180A priority Critical patent/JPS5717137A/en
Publication of JPS5717137A publication Critical patent/JPS5717137A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To increase the tight adhesive property between sealing resin and a chip or a substrate and an interface by a method wherein a resin sealing is performed between a semiconductor chip and the substrate on which the semiconductor chip is provided using a coupling agent containing no nitrogen. CONSTITUTION:An a coupling agent containing no nitrogen in a molecule, a silance coupling agent such as beta-ethyltrimethoxysilane and gamma-glycidoxypropyltrimethoxysilane or a titanium coupling agent such as isopropyltriisostearoyl titanate and isopropyl trititanate is used alone or conjointly. The coupling agent, in the form of an isopropyl alcohol solution in a concentration of 0.03-10wt%, is applied to the semiconductor chip or/and the substrate by dipping or spraying.
JP9244180A 1980-07-04 1980-07-04 Manufacture of semiconductor element Pending JPS5717137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9244180A JPS5717137A (en) 1980-07-04 1980-07-04 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9244180A JPS5717137A (en) 1980-07-04 1980-07-04 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5717137A true JPS5717137A (en) 1982-01-28

Family

ID=14054497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9244180A Pending JPS5717137A (en) 1980-07-04 1980-07-04 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5717137A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854658A (en) * 1981-09-28 1983-03-31 Nec Corp Semiconductor device
JPS59165774A (en) * 1983-03-09 1984-09-19 株式会社竹中工務店 Wall attached concrete earthquake-proof structure
JPS6030766A (en) * 1983-07-28 1985-02-16 東急建設株式会社 Method and structure for controlling crack in concrete wall opening part
JPS6346511U (en) * 1986-09-16 1988-03-29
EP0406814A2 (en) * 1989-07-06 1991-01-09 Solarex Corporation Spray encapsulation of photovoltaic modules

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854658A (en) * 1981-09-28 1983-03-31 Nec Corp Semiconductor device
JPS59165774A (en) * 1983-03-09 1984-09-19 株式会社竹中工務店 Wall attached concrete earthquake-proof structure
JPS6363706B2 (en) * 1983-03-09 1988-12-08
JPS6030766A (en) * 1983-07-28 1985-02-16 東急建設株式会社 Method and structure for controlling crack in concrete wall opening part
JPH0447745B2 (en) * 1983-07-28 1992-08-04 Tokyu Kensetsu Kk
JPS6346511U (en) * 1986-09-16 1988-03-29
JPH0331767Y2 (en) * 1986-09-16 1991-07-05
EP0406814A2 (en) * 1989-07-06 1991-01-09 Solarex Corporation Spray encapsulation of photovoltaic modules

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