JPS5716446A - Formation of micropattern and photoresist used in said formation - Google Patents

Formation of micropattern and photoresist used in said formation

Info

Publication number
JPS5716446A
JPS5716446A JP9141680A JP9141680A JPS5716446A JP S5716446 A JPS5716446 A JP S5716446A JP 9141680 A JP9141680 A JP 9141680A JP 9141680 A JP9141680 A JP 9141680A JP S5716446 A JPS5716446 A JP S5716446A
Authority
JP
Japan
Prior art keywords
triallyl
formation
photosensitive
micropattern
pyromellitate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9141680A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0258617B2 (cg-RX-API-DMAC7.html
Inventor
Kazuo Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9141680A priority Critical patent/JPS5716446A/ja
Publication of JPS5716446A publication Critical patent/JPS5716446A/ja
Publication of JPH0258617B2 publication Critical patent/JPH0258617B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP9141680A 1980-07-04 1980-07-04 Formation of micropattern and photoresist used in said formation Granted JPS5716446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9141680A JPS5716446A (en) 1980-07-04 1980-07-04 Formation of micropattern and photoresist used in said formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9141680A JPS5716446A (en) 1980-07-04 1980-07-04 Formation of micropattern and photoresist used in said formation

Publications (2)

Publication Number Publication Date
JPS5716446A true JPS5716446A (en) 1982-01-27
JPH0258617B2 JPH0258617B2 (cg-RX-API-DMAC7.html) 1990-12-10

Family

ID=14025763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9141680A Granted JPS5716446A (en) 1980-07-04 1980-07-04 Formation of micropattern and photoresist used in said formation

Country Status (1)

Country Link
JP (1) JPS5716446A (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016511250A (ja) * 2013-02-25 2016-04-14 コリア インスティチュート オブ インダストリアル テクノロジー アルコキシシリル基を有するエポキシ化合物、その製造方法、それを含む組成物と硬化物及びその用途
US9366957B2 (en) * 2010-02-02 2016-06-14 Covestro Deutschland Ag Photopolymer formulation having triazine-based writing monomers
WO2018199419A1 (en) * 2017-04-28 2018-11-01 Samsung Sdi Co., Ltd. Resist underlayer composition and method of forming patterns using the resist underlayer composition
US11840601B2 (en) 2019-11-15 2023-12-12 Korea Institute Of Industrial Technology Composition of alkoxysilyl-functionalized epoxy resin and composite thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691229A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Pattern forming method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691229A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Pattern forming method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9366957B2 (en) * 2010-02-02 2016-06-14 Covestro Deutschland Ag Photopolymer formulation having triazine-based writing monomers
JP2016511250A (ja) * 2013-02-25 2016-04-14 コリア インスティチュート オブ インダストリアル テクノロジー アルコキシシリル基を有するエポキシ化合物、その製造方法、それを含む組成物と硬化物及びその用途
US9732182B2 (en) 2013-02-25 2017-08-15 Korea Institute Of Industrial Technology Epoxy compound having alkoxysilyl group, method of preparing the same, composition and cured product comprising the same, and use thereof
WO2018199419A1 (en) * 2017-04-28 2018-11-01 Samsung Sdi Co., Ltd. Resist underlayer composition and method of forming patterns using the resist underlayer composition
TWI655224B (zh) * 2017-04-28 2019-04-01 南韓商三星Ｓｄｉ股份有限公司 抗蝕劑底層組成物及使用抗蝕劑底層組成物的圖案形成方法
US11840601B2 (en) 2019-11-15 2023-12-12 Korea Institute Of Industrial Technology Composition of alkoxysilyl-functionalized epoxy resin and composite thereof

Also Published As

Publication number Publication date
JPH0258617B2 (cg-RX-API-DMAC7.html) 1990-12-10

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