JPS57160120A - Generating equipment for silicon film - Google Patents
Generating equipment for silicon filmInfo
- Publication number
- JPS57160120A JPS57160120A JP56044791A JP4479181A JPS57160120A JP S57160120 A JPS57160120 A JP S57160120A JP 56044791 A JP56044791 A JP 56044791A JP 4479181 A JP4479181 A JP 4479181A JP S57160120 A JPS57160120 A JP S57160120A
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- fluorine
- hydrogen
- cathode
- mixed gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56044791A JPS57160120A (en) | 1981-03-27 | 1981-03-27 | Generating equipment for silicon film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56044791A JPS57160120A (en) | 1981-03-27 | 1981-03-27 | Generating equipment for silicon film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57160120A true JPS57160120A (en) | 1982-10-02 |
Family
ID=12701234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56044791A Pending JPS57160120A (en) | 1981-03-27 | 1981-03-27 | Generating equipment for silicon film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57160120A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59193266A (ja) * | 1983-03-14 | 1984-11-01 | Stanley Electric Co Ltd | プラズマcvd装置 |
-
1981
- 1981-03-27 JP JP56044791A patent/JPS57160120A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59193266A (ja) * | 1983-03-14 | 1984-11-01 | Stanley Electric Co Ltd | プラズマcvd装置 |
JPS6151632B2 (ja) * | 1983-03-14 | 1986-11-10 | Stanley Electric Co Ltd |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES8503892A1 (es) | Procedimiento para depositar un material transparente electricamente aislante sobre un dispositivo fotovoltaico | |
JPS5777021A (en) | Manufacture of amorphous silicon | |
KR890013210A (ko) | 탄소계 피막 부착방법 | |
CA2174545A1 (en) | Electrolytic cell for producing a mixed oxidant gas | |
TW363223B (en) | A method for improving the quality of a titanium nitride layer including carbon and oxygen | |
EP0147012A3 (en) | Method and apparatus for separating oxygen from a gaseous mixture | |
JPS57160120A (en) | Generating equipment for silicon film | |
JPS5727024A (en) | Washing of reactor for plasma cvd method | |
JPS5426657A (en) | Cathode ray tube | |
ES2094099A1 (es) | Procedimiento para la separacion electrolitica del oxigeno de sus mezclas y equipo para la realizacion de este procedimiento. | |
JPS57159016A (en) | Manufacture of amorphous silicon film | |
JPS5344485A (en) | Electrode | |
JPS52127770A (en) | Spatter etching method | |
UA28189A (uk) | Спосіб вилучення сірководню із мінералізованої води та пристрій для його здійснення | |
Emeleus | Double space-charge layers and anode glows | |
JPS57187935A (en) | Forming of fine crystalline amorphous silicon film | |
JPS56167371A (en) | Solar cell | |
JPS5799725A (en) | Manufacture of amorphous semiconductor film | |
JPS53126859A (en) | Field radiation type electronic gun | |
JPS5457238A (en) | Glow-discharge heating apparatus | |
JPS5590799A (en) | Hydrogen storage structure equipped with electrode part | |
JPS5715339A (en) | Gas filling method in exhauster for fluorescent lamp | |
JPS648299A (en) | Device for etching aluminum foil for electrolytic capacitor | |
Bersis et al. | Time lag between current and light pulses in the electrode-less discharge | |
JPS539082A (en) | Gas exhausting device for fluorescent lamp |