JPS57154912A - High frequency detector - Google Patents

High frequency detector

Info

Publication number
JPS57154912A
JPS57154912A JP3964981A JP3964981A JPS57154912A JP S57154912 A JPS57154912 A JP S57154912A JP 3964981 A JP3964981 A JP 3964981A JP 3964981 A JP3964981 A JP 3964981A JP S57154912 A JPS57154912 A JP S57154912A
Authority
JP
Japan
Prior art keywords
high frequency
diode
voltage
circuit
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3964981A
Other languages
Japanese (ja)
Inventor
Yukinari Fujiwara
Takao Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Denshi KK
Original Assignee
Hitachi Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Denshi KK filed Critical Hitachi Denshi KK
Priority to JP3964981A priority Critical patent/JPS57154912A/en
Publication of JPS57154912A publication Critical patent/JPS57154912A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00—Demodulation of amplitude-modulated oscillations
    • H03D1/08—Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements
    • H03D1/10—Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements of diodes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To compensate the junction voltage temperature characteristics of a wave detecting diode for a high frequency detector which detects the electric power level, by connecting a diode in series to the load resistance of the detecting diode and then applying the DC voltage to the diode. CONSTITUTION:The voltage Vin of a high frequency input terminal 1 is applied to a wave detecting diode D1 via a capacitor C1 and a choke coil L1. A diode D2 is connected in series to the load resistance Rl of the D1, and the DC voltage -Vcc is applied to the D2. A smoothing circuit C2 is provided, and the high frequency voltage Vin is applied to the C2 via the C1 and C3. In such way, the D2 is formed identical with the D1. As a result, the output of the detection voltage of a terminal 2 has no relation with the temperature. In such way, the perfect temperature compensation is possible for a high frequency circuit, or a circuit having the optional temperature characteristics can be obtained.
JP3964981A 1981-03-20 1981-03-20 High frequency detector Pending JPS57154912A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3964981A JPS57154912A (en) 1981-03-20 1981-03-20 High frequency detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3964981A JPS57154912A (en) 1981-03-20 1981-03-20 High frequency detector

Publications (1)

Publication Number Publication Date
JPS57154912A true JPS57154912A (en) 1982-09-24

Family

ID=12558923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3964981A Pending JPS57154912A (en) 1981-03-20 1981-03-20 High frequency detector

Country Status (1)

Country Link
JP (1) JPS57154912A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0291345A2 (en) * 1987-05-15 1988-11-17 Nec Corporation A temperature stabilized RF detector
US5659253A (en) * 1994-11-17 1997-08-19 Lucent Technologies Inc. Temperature compensated radio frequency detector circuit
WO2000076062A1 (en) * 1999-06-04 2000-12-14 Telefonaktiebolaget Lm Ericsson (Publ) Improved diode detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4974869A (en) * 1972-11-20 1974-07-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4974869A (en) * 1972-11-20 1974-07-19

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0291345A2 (en) * 1987-05-15 1988-11-17 Nec Corporation A temperature stabilized RF detector
US5659253A (en) * 1994-11-17 1997-08-19 Lucent Technologies Inc. Temperature compensated radio frequency detector circuit
EP0713288A3 (en) * 1994-11-17 1998-03-11 Lucent Technologies Inc. Radio frequency detector circuit
WO2000076062A1 (en) * 1999-06-04 2000-12-14 Telefonaktiebolaget Lm Ericsson (Publ) Improved diode detector
US6262630B1 (en) 1999-06-04 2001-07-17 Telefonaktiebolaget Lm Ericsson (Publ) Rapidly-responding diode detector with temperature compensation

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