JPS57133682A - Method of producing field effect transistor - Google Patents

Method of producing field effect transistor

Info

Publication number
JPS57133682A
JPS57133682A JP56206807A JP20680781A JPS57133682A JP S57133682 A JPS57133682 A JP S57133682A JP 56206807 A JP56206807 A JP 56206807A JP 20680781 A JP20680781 A JP 20680781A JP S57133682 A JPS57133682 A JP S57133682A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
producing field
producing
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56206807A
Other languages
English (en)
Japanese (ja)
Inventor
Maigunanto Deideieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS57133682A publication Critical patent/JPS57133682A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP56206807A 1980-12-24 1981-12-21 Method of producing field effect transistor Pending JPS57133682A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8027423A FR2496982A1 (fr) 1980-12-24 1980-12-24 Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus

Publications (1)

Publication Number Publication Date
JPS57133682A true JPS57133682A (en) 1982-08-18

Family

ID=9249463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56206807A Pending JPS57133682A (en) 1980-12-24 1981-12-21 Method of producing field effect transistor

Country Status (5)

Country Link
US (1) US4429452A (OSRAM)
EP (1) EP0054998B1 (OSRAM)
JP (1) JPS57133682A (OSRAM)
DE (1) DE3169122D1 (OSRAM)
FR (1) FR2496982A1 (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961074A (ja) * 1982-09-01 1984-04-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 電界効果トランジスタの製造方法
JPS59165461A (ja) * 1983-03-10 1984-09-18 Oki Electric Ind Co Ltd ショットキ接合形化合物半導体電界効果トランジスタの製造方法
JPS59205765A (ja) * 1983-05-09 1984-11-21 Nec Corp 半導体装置の製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4651179A (en) * 1983-01-21 1987-03-17 Rca Corporation Low resistance gallium arsenide field effect transistor
US4545109A (en) * 1983-01-21 1985-10-08 Rca Corporation Method of making a gallium arsenide field effect transistor
JPS59177970A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd 半導体装置及びその製造方法
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
US4784967A (en) * 1986-12-19 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating a field-effect transistor with a self-aligned gate
US5185293A (en) * 1992-04-10 1993-02-09 Eastman Kodak Company Method of forming and aligning patterns in deposted overlaying on GaAs
US5432119A (en) * 1994-01-31 1995-07-11 Hughes Aircraft Company High yield electron-beam gate fabrication method for sub-micron gate FETS
US11234698B2 (en) 2019-12-19 2022-02-01 Cilag Gmbh International Stapling system comprising a clamp lockout and a firing lockout

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591833A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Method of forming submicron pattern

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678573A (en) 1970-03-10 1972-07-25 Westinghouse Electric Corp Self-aligned gate field effect transistor and method of preparing
US3764865A (en) 1970-03-17 1973-10-09 Rca Corp Semiconductor devices having closely spaced contacts
NL7007171A (OSRAM) 1970-05-16 1971-11-18
US3675313A (en) 1970-10-01 1972-07-11 Westinghouse Electric Corp Process for producing self aligned gate field effect transistor
US3920861A (en) 1972-12-18 1975-11-18 Rca Corp Method of making a semiconductor device
US3866310A (en) 1973-09-07 1975-02-18 Westinghouse Electric Corp Method for making the self-aligned gate contact of a semiconductor device
US4075652A (en) 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
JPS5131186A (OSRAM) * 1974-09-11 1976-03-17 Hitachi Ltd
US3898353A (en) 1974-10-03 1975-08-05 Us Army Self aligned drain and gate field effect transistor
US4063992A (en) 1975-05-27 1977-12-20 Fairchild Camera And Instrument Corporation Edge etch method for producing narrow openings to the surface of materials
IT1041193B (it) 1975-08-08 1980-01-10 Selenia Ind Elettroniche Perfezionamenti nei procedimenti per la fabbricazione di dispositivi a semiconduttor
GB1563913A (en) * 1975-12-12 1980-04-02 Hughes Aircraft Co Method of making schottky-barrier gallium arsenide field effect devices
US4145459A (en) 1978-02-02 1979-03-20 Rca Corporation Method of making a short gate field effect transistor
US4194285A (en) * 1978-06-15 1980-03-25 Rca Corporation Method of making a field effect transistor
DE2835642A1 (de) 1978-08-14 1980-02-28 Siemens Ag Monolithische integrierte schaltung mit feldeffekttransistoren und verfahren zu ihrer herstellung
US4261095A (en) 1978-12-11 1981-04-14 International Business Machines Corporation Self aligned schottky guard ring
US4266333A (en) 1979-04-27 1981-05-12 Rca Corporation Method of making a Schottky barrier field effect transistor
US4318759A (en) 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591833A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Method of forming submicron pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961074A (ja) * 1982-09-01 1984-04-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 電界効果トランジスタの製造方法
JPS59165461A (ja) * 1983-03-10 1984-09-18 Oki Electric Ind Co Ltd ショットキ接合形化合物半導体電界効果トランジスタの製造方法
JPS59205765A (ja) * 1983-05-09 1984-11-21 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2496982B1 (OSRAM) 1984-08-24
FR2496982A1 (fr) 1982-06-25
EP0054998A1 (fr) 1982-06-30
DE3169122D1 (en) 1985-03-28
EP0054998B1 (fr) 1985-02-20
US4429452A (en) 1984-02-07

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