JPS5712138B2 - - Google Patents

Info

Publication number
JPS5712138B2
JPS5712138B2 JP7117777A JP7117777A JPS5712138B2 JP S5712138 B2 JPS5712138 B2 JP S5712138B2 JP 7117777 A JP7117777 A JP 7117777A JP 7117777 A JP7117777 A JP 7117777A JP S5712138 B2 JPS5712138 B2 JP S5712138B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7117777A
Other languages
Japanese (ja)
Other versions
JPS52155531A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS52155531A publication Critical patent/JPS52155531A/en
Publication of JPS5712138B2 publication Critical patent/JPS5712138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
JP7117777A 1976-06-17 1977-06-17 Dry photo resist developing method Granted JPS52155531A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69730376A 1976-06-17 1976-06-17

Publications (2)

Publication Number Publication Date
JPS52155531A JPS52155531A (en) 1977-12-24
JPS5712138B2 true JPS5712138B2 (en) 1982-03-09

Family

ID=24800591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7117777A Granted JPS52155531A (en) 1976-06-17 1977-06-17 Dry photo resist developing method

Country Status (2)

Country Link
JP (1) JPS52155531A (en)
DE (1) DE2726813C2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
JPS5565365A (en) * 1978-11-07 1980-05-16 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPS5569265A (en) * 1978-11-15 1980-05-24 Hitachi Ltd Pattern-forming method
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists
US4278753A (en) 1980-02-25 1981-07-14 Horizons Research Incorporated Plasma developable photoresist composition with polyvinyl formal binder
JPS56137347A (en) * 1980-03-29 1981-10-27 Tokyo Ohka Kogyo Co Ltd Photosensitive composition for dry development
DE3015469A1 (en) * 1980-04-22 1981-10-29 Dai Nippon Printing Co., Ltd. Lithographic printing plate mfr. - by forming protective hardened organo-polysiloxane layer on silicone layer, rendering unprotected areas oleophilic and removing protection
JPS5744143A (en) * 1980-08-29 1982-03-12 Tokyo Ohka Kogyo Co Ltd Composition and method for forming micropattern
JPS585735A (en) * 1981-06-01 1983-01-13 Daikin Ind Ltd Manufacture of patterned resist film on substrate
JPS582025A (en) * 1981-06-29 1983-01-07 Fujitsu Ltd Pattern formation
JPS5860537A (en) * 1981-10-07 1983-04-11 Tokyo Ohka Kogyo Co Ltd Dry type pattern forming method
JPS58117539A (en) * 1981-12-30 1983-07-13 Tokyo Denshi Kagaku Kabushiki Detection for end point of dry developing
US4497891A (en) * 1983-10-25 1985-02-05 International Business Machines Corporation Dry-developed, negative working electron resist system
DE3913434A1 (en) * 1989-04-24 1990-10-25 Siemens Ag DRY-WRAPPABLE RESIST SYSTEM
DE69130594T2 (en) * 1990-06-29 1999-05-06 Fujitsu Ltd., Kawasaki, Kanagawa Process for creating a pattern

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4999558A (en) * 1973-01-25 1974-09-20
JPS5090330A (en) * 1973-12-10 1975-07-19
JPS5151938A (en) * 1974-10-31 1976-05-07 Tokyo Ohka Kogyo Co Ltd Fuotorejisutono kaikahoho
JPS5272175A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Mask patterning of resist meterial

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3705055A (en) * 1970-09-18 1972-12-05 Western Electric Co Method of descumming photoresist patterns
US3920483A (en) * 1974-11-25 1975-11-18 Ibm Method of ion implantation through a photoresist mask

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4999558A (en) * 1973-01-25 1974-09-20
JPS5090330A (en) * 1973-12-10 1975-07-19
JPS5151938A (en) * 1974-10-31 1976-05-07 Tokyo Ohka Kogyo Co Ltd Fuotorejisutono kaikahoho
JPS5272175A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Mask patterning of resist meterial

Also Published As

Publication number Publication date
DE2726813A1 (en) 1977-12-29
DE2726813C2 (en) 1984-02-23
JPS52155531A (en) 1977-12-24

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