JPS57115881A - Phototransistor - Google Patents

Phototransistor

Info

Publication number
JPS57115881A
JPS57115881A JP56188283A JP18828381A JPS57115881A JP S57115881 A JPS57115881 A JP S57115881A JP 56188283 A JP56188283 A JP 56188283A JP 18828381 A JP18828381 A JP 18828381A JP S57115881 A JPS57115881 A JP S57115881A
Authority
JP
Japan
Prior art keywords
phototransistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56188283A
Other languages
English (en)
Other versions
JPS6146074B2 (ja
Inventor
Baumugarutonaa Uerunaa
Kurotsukofu Deiita
Teihanii Ieno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of JPS57115881A publication Critical patent/JPS57115881A/ja
Publication of JPS6146074B2 publication Critical patent/JPS6146074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP56188283A 1980-11-25 1981-11-24 Phototransistor Granted JPS57115881A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3044341A DE3044341C2 (de) 1980-11-25 1980-11-25 Fototransistor

Publications (2)

Publication Number Publication Date
JPS57115881A true JPS57115881A (en) 1982-07-19
JPS6146074B2 JPS6146074B2 (ja) 1986-10-11

Family

ID=6117519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56188283A Granted JPS57115881A (en) 1980-11-25 1981-11-24 Phototransistor

Country Status (4)

Country Link
US (1) US4524375A (ja)
EP (1) EP0052739B1 (ja)
JP (1) JPS57115881A (ja)
DE (2) DE3044341C2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS597183A (ja) * 1982-07-02 1984-01-14 Yasumitsu Tamura ナフタセンキノン誘導体

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669040B2 (ja) * 1985-05-13 1994-08-31 株式会社東芝 光半導体装置
US4926231A (en) * 1988-08-05 1990-05-15 Motorola Inc. Integrated pin photo-detector
US5994162A (en) * 1998-02-05 1999-11-30 International Business Machines Corporation Integrated circuit-compatible photo detector device and fabrication process
JP6281297B2 (ja) * 2014-01-27 2018-02-21 株式会社リコー フォトトランジスタ、及び半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL274830A (ja) * 1961-04-12
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
US3518494A (en) * 1964-06-29 1970-06-30 Signetics Corp Radiation resistant semiconductor device and method
GB1348697A (en) * 1970-07-31 1974-03-20 Fairchild Camera Instr Co Semiconductors
US3663869A (en) * 1971-01-26 1972-05-16 Westinghouse Electric Corp Bipolar-unipolar transistor structure
JPS5732547B2 (ja) * 1974-12-25 1982-07-12
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication
US4107721A (en) * 1977-01-26 1978-08-15 Bell Telephone Laboratories, Incorporated Phototransistor
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
US4318115A (en) * 1978-07-24 1982-03-02 Sharp Kabushiki Kaisha Dual junction photoelectric semiconductor device
CH634442A5 (de) * 1978-11-15 1983-01-31 Bbc Brown Boveri & Cie Lichtzuendbarer thyristor.
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4321486A (en) * 1980-02-22 1982-03-23 Honeywell Inc. Photodetector signal control in charge transfer device imager

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS597183A (ja) * 1982-07-02 1984-01-14 Yasumitsu Tamura ナフタセンキノン誘導体
JPH0257552B2 (ja) * 1982-07-02 1990-12-05 Yasumitsu Tamura

Also Published As

Publication number Publication date
DE3044341C2 (de) 1984-10-25
EP0052739A2 (de) 1982-06-02
US4524375A (en) 1985-06-18
EP0052739A3 (en) 1983-03-16
DE3173726D1 (en) 1986-03-20
DE3044341A1 (de) 1982-06-03
EP0052739B1 (de) 1986-02-05
JPS6146074B2 (ja) 1986-10-11

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