JPS571149B2 - - Google Patents

Info

Publication number
JPS571149B2
JPS571149B2 JP9855374A JP9855374A JPS571149B2 JP S571149 B2 JPS571149 B2 JP S571149B2 JP 9855374 A JP9855374 A JP 9855374A JP 9855374 A JP9855374 A JP 9855374A JP S571149 B2 JPS571149 B2 JP S571149B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9855374A
Other languages
Japanese (ja)
Other versions
JPS5125985A (en, 2012
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9855374A priority Critical patent/JPS571149B2/ja
Priority to US05/607,711 priority patent/US4011576A/en
Publication of JPS5125985A publication Critical patent/JPS5125985A/ja
Publication of JPS571149B2 publication Critical patent/JPS571149B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
JP9855374A 1974-08-28 1974-08-28 Expired JPS571149B2 (en, 2012)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9855374A JPS571149B2 (en, 2012) 1974-08-28 1974-08-28
US05/607,711 US4011576A (en) 1974-08-28 1975-08-25 Nonvolatile semiconductor memory devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9855374A JPS571149B2 (en, 2012) 1974-08-28 1974-08-28

Publications (2)

Publication Number Publication Date
JPS5125985A JPS5125985A (en, 2012) 1976-03-03
JPS571149B2 true JPS571149B2 (en, 2012) 1982-01-09

Family

ID=14222866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9855374A Expired JPS571149B2 (en, 2012) 1974-08-28 1974-08-28

Country Status (2)

Country Link
US (1) US4011576A (en, 2012)
JP (1) JPS571149B2 (en, 2012)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4193080A (en) * 1975-02-20 1980-03-11 Matsushita Electronics Corporation Non-volatile memory device
JPS52105784A (en) * 1976-03-01 1977-09-05 Sony Corp Mios type memory unit
US4350991A (en) * 1978-01-06 1982-09-21 International Business Machines Corp. Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance
US4151538A (en) * 1978-01-30 1979-04-24 Rca Corp. Nonvolatile semiconductive memory device and method of its manufacture
US4307411A (en) * 1978-01-30 1981-12-22 Rca Corporation Nonvolatile semiconductor memory device and method of its manufacture
US4198252A (en) * 1978-04-06 1980-04-15 Rca Corporation MNOS memory device
DE2842589A1 (de) * 1978-09-29 1980-05-08 Siemens Ag Feldeffekttransistor mit verringerter substratsteuerung der kanalbreite
US4330930A (en) * 1980-02-12 1982-05-25 General Instrument Corp. Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process
US4456978A (en) * 1980-02-12 1984-06-26 General Instrument Corp. Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process
US4395725A (en) * 1980-10-14 1983-07-26 Parekh Rajesh H Segmented channel field effect transistors
DE3273867D1 (en) * 1981-07-27 1986-11-20 Xerox Corp Field effect transistor
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4490900A (en) * 1982-01-29 1985-01-01 Seeq Technology, Inc. Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein
EP0110320B1 (en) * 1982-11-27 1987-03-11 Nissan Motor Co., Ltd. A mos transistor
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
EP0113540A3 (en) * 1982-12-10 1985-06-05 Western Electric Company, Incorporated Improvements in or relating to semiconductor devices, and methods of making same
JPS6453464A (en) * 1988-07-22 1989-03-01 Seiko Epson Corp Nonvolatile memory
FR2648622B1 (fr) * 1989-06-14 1991-08-30 Commissariat Energie Atomique Procede de fabrication d'un circuit integre comportant un transistor a effet de champ a double implantation
US5215934A (en) * 1989-12-21 1993-06-01 Tzeng Jyh Cherng J Process for reducing program disturbance in eeprom arrays

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759057A (en, 2012) * 1969-11-19 1971-05-17 Philips Nv
JPS5139834B2 (en, 2012) * 1971-11-09 1976-10-29
US3845327A (en) * 1972-08-16 1974-10-29 Westinghouse Electric Corp Counter with memory utilizing mnos memory elements
JPS4960896A (en, 2012) * 1972-09-20 1974-06-13
JPS4960876A (en, 2012) * 1972-10-16 1974-06-13

Also Published As

Publication number Publication date
US4011576A (en) 1977-03-08
JPS5125985A (en, 2012) 1976-03-03

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