JPS57109943A - Formation of submicron pattern using radiation sensitive resist - Google Patents

Formation of submicron pattern using radiation sensitive resist

Info

Publication number
JPS57109943A
JPS57109943A JP55183996A JP18399680A JPS57109943A JP S57109943 A JPS57109943 A JP S57109943A JP 55183996 A JP55183996 A JP 55183996A JP 18399680 A JP18399680 A JP 18399680A JP S57109943 A JPS57109943 A JP S57109943A
Authority
JP
Japan
Prior art keywords
resist
substrate
radiation
pattern
radiation sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55183996A
Other languages
Japanese (ja)
Inventor
Takeshi Sukegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55183996A priority Critical patent/JPS57109943A/en
Publication of JPS57109943A publication Critical patent/JPS57109943A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To finely work a substrate into a pattern of submicron order by using a radiation sensitive resist made of specified high molecular compound. CONSTITUTION:A polymer represented by the formula{where (m) and (n) are values adjusting the chloromethyl group content[m/(m+n)X100(%)]to >=30%} and having 5,000-60,000mol.wt. and <=1.5 dispersity (wt. average mol.wt./no. average mol.wt.) is used as a radiation senstivie resist. For example, the polymer is formed by chloromethylating poly-alpha-methylstyrene with low dispersity obtd. by living polymn. A film of said resist laid on a substrate to be worked is exposed to radiation and developed with a developer such as acetone or ketone-alcohol mixed soln. to form a resist pattern, and the substrate is patternwise worked using the patterned resist film as a protective mask.
JP55183996A 1980-12-26 1980-12-26 Formation of submicron pattern using radiation sensitive resist Pending JPS57109943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183996A JPS57109943A (en) 1980-12-26 1980-12-26 Formation of submicron pattern using radiation sensitive resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183996A JPS57109943A (en) 1980-12-26 1980-12-26 Formation of submicron pattern using radiation sensitive resist

Publications (1)

Publication Number Publication Date
JPS57109943A true JPS57109943A (en) 1982-07-08

Family

ID=16145490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183996A Pending JPS57109943A (en) 1980-12-26 1980-12-26 Formation of submicron pattern using radiation sensitive resist

Country Status (1)

Country Link
JP (1) JPS57109943A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948759A (en) * 1982-09-13 1984-03-21 Kureha Chem Ind Co Ltd Photoresist material
US4515886A (en) * 1983-02-16 1985-05-07 Toyo Soda Manufacturing Co., Ltd. Photosensitive compositions
JPH01118507A (en) * 1987-10-30 1989-05-11 Nec Corp Flatting material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074427A (en) * 1973-10-23 1975-06-19
JPS54155826A (en) * 1978-05-23 1979-12-08 Western Electric Co Method of producing radiation sensitive resist and product therefor
JPS5511217A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method using radiation sensitive high polymer
JPS5582437A (en) * 1978-12-15 1980-06-21 Fujitsu Ltd Method of making pattern

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074427A (en) * 1973-10-23 1975-06-19
JPS54155826A (en) * 1978-05-23 1979-12-08 Western Electric Co Method of producing radiation sensitive resist and product therefor
JPS5511217A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method using radiation sensitive high polymer
JPS5582437A (en) * 1978-12-15 1980-06-21 Fujitsu Ltd Method of making pattern

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948759A (en) * 1982-09-13 1984-03-21 Kureha Chem Ind Co Ltd Photoresist material
JPH0527106B2 (en) * 1982-09-13 1993-04-20 Kureha Chemical Ind Co Ltd
US4515886A (en) * 1983-02-16 1985-05-07 Toyo Soda Manufacturing Co., Ltd. Photosensitive compositions
JPH01118507A (en) * 1987-10-30 1989-05-11 Nec Corp Flatting material

Similar Documents

Publication Publication Date Title
JPS5678834A (en) Photographic sensitive material
DE69628996D1 (en) Polymer composition and resist material
JPS57202537A (en) Resist composition for dry development
JPS5577741A (en) Novel photoresist composition
JPS5635130A (en) Resist material and method for forming resist pattern
JPS5744143A (en) Composition and method for forming micropattern
JPS56162744A (en) Formation of fine pattern
KR890017278A (en) Photoinitiator Copolymer
JPS57109943A (en) Formation of submicron pattern using radiation sensitive resist
JPS5655942A (en) Photographic material
JPS5379983A (en) Novel polymer
JPS56137347A (en) Photosensitive composition for dry development
JPS5536241A (en) Curable composition
JPS5614232A (en) Negative type resist resin
JPS5324782A (en) Forming method of high molecular film patterns by negative resist
JPS53104684A (en) Preparation of vinyl chloride polymer
EP0333591A3 (en) Process for formation of resist patterns
JPS5386787A (en) Polymer having fluorine-containing segment and its production
JPS5550053A (en) Resist material for fine processing
JPS5734550A (en) Formation of pattern
JPS5386788A (en) Polymer having fluorine-containing segment and its production
JPS5374586A (en) Production of chloride polymer
JPS55138835A (en) Method of forming photoresist pattern
JPS5517318A (en) Termite-proofing coating composition
JPS5399292A (en) Heat decomposable photosensitive resin composition