JPS57104229A - Vapor phase growing method for znse compound - Google Patents

Vapor phase growing method for znse compound

Info

Publication number
JPS57104229A
JPS57104229A JP55180370A JP18037080A JPS57104229A JP S57104229 A JPS57104229 A JP S57104229A JP 55180370 A JP55180370 A JP 55180370A JP 18037080 A JP18037080 A JP 18037080A JP S57104229 A JPS57104229 A JP S57104229A
Authority
JP
Japan
Prior art keywords
reaction tube
transmissivity
material feeding
hydrogen selenide
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55180370A
Other languages
Japanese (ja)
Other versions
JPS6148256B2 (en
Inventor
Kouichi Koukado
Hirokuni Nanba
Shigeo Murai
Hajime Osaka
Goji Yamaguchi
Hiroshi Shima
Hiroshi Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP55180370A priority Critical patent/JPS57104229A/en
Publication of JPS57104229A publication Critical patent/JPS57104229A/en
Publication of JPS6148256B2 publication Critical patent/JPS6148256B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To attain a proper material feeding ratio in term of stoichiometry by detecting excessive material feeding through decrease in transmissivity of a light source when an excess of hydrogen selenide is supplied. CONSTITUTION:A light source, for example, a laser 22 is provided at an outlet region 21 of a reaction tube, and a laser light 23 is projected into the reaction tube. A light passed through the reaction tube is subjected to spectroscopic analysis by a monochromater 24 and detected in a photo detector 25. When an excess of zinc vapor or hydrogen selenide is supplied, a stream of fine particles is generated around the outlet of the reaction tube, and observed transmissivity of the laser light is decreased. In this apparatus, a feeding speed of hydrogen selenide is adjusted so that maximum transmissivity of a laser light may be obtained. By this method, bacause a proper material feeding in term of stoichiometry can be maintained, an abnormality on ZnSe compound formed on the substrate is prevented.
JP55180370A 1980-12-22 1980-12-22 Vapor phase growing method for znse compound Granted JPS57104229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55180370A JPS57104229A (en) 1980-12-22 1980-12-22 Vapor phase growing method for znse compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55180370A JPS57104229A (en) 1980-12-22 1980-12-22 Vapor phase growing method for znse compound

Publications (2)

Publication Number Publication Date
JPS57104229A true JPS57104229A (en) 1982-06-29
JPS6148256B2 JPS6148256B2 (en) 1986-10-23

Family

ID=16082050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55180370A Granted JPS57104229A (en) 1980-12-22 1980-12-22 Vapor phase growing method for znse compound

Country Status (1)

Country Link
JP (1) JPS57104229A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4821542B1 (en) * 1967-06-26 1973-06-29
JPS4893137A (en) * 1972-02-15 1973-12-03
JPS54158363U (en) * 1978-04-26 1979-11-05

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4821542B1 (en) * 1967-06-26 1973-06-29
JPS4893137A (en) * 1972-02-15 1973-12-03
JPS54158363U (en) * 1978-04-26 1979-11-05

Also Published As

Publication number Publication date
JPS6148256B2 (en) 1986-10-23

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