JPS57102082A - Light emitting and receiving transistor - Google Patents

Light emitting and receiving transistor

Info

Publication number
JPS57102082A
JPS57102082A JP17127581A JP17127581A JPS57102082A JP S57102082 A JPS57102082 A JP S57102082A JP 17127581 A JP17127581 A JP 17127581A JP 17127581 A JP17127581 A JP 17127581A JP S57102082 A JPS57102082 A JP S57102082A
Authority
JP
Japan
Prior art keywords
light emitting
receiving transistor
transistor
receiving
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17127581A
Other languages
English (en)
Japanese (ja)
Inventor
Puuran Pieeru
Dou Kuremuu Boodouan
Irutsu Pieeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS57102082A publication Critical patent/JPS57102082A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

Landscapes

  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP17127581A 1980-10-28 1981-10-26 Light emitting and receiving transistor Pending JPS57102082A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8023015A FR2493047A1 (fr) 1980-10-28 1980-10-28 Transistor emetteur-recepteur de lumiere pour telecommunications a l'alternat sur fibre optique

Publications (1)

Publication Number Publication Date
JPS57102082A true JPS57102082A (en) 1982-06-24

Family

ID=9247398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17127581A Pending JPS57102082A (en) 1980-10-28 1981-10-26 Light emitting and receiving transistor

Country Status (5)

Country Link
US (1) US4485391A (enExample)
EP (1) EP0051505B1 (enExample)
JP (1) JPS57102082A (enExample)
DE (1) DE3160184D1 (enExample)
FR (1) FR2493047A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3337492A1 (de) * 1983-10-13 1985-04-25 Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, 1000 Berlin Elektro-optisches halbleiter-bauelement mit einer lichtwellen fuehrenden schicht und seine verwendung als elektro-optischer modulator
JPH0758774B2 (ja) * 1984-10-26 1995-06-21 工業技術院長 半導体装置
US4732446A (en) * 1985-10-02 1988-03-22 Lamar Gipson Electrical circuit and optical data buss
US4845052A (en) * 1986-02-07 1989-07-04 Harris Corporation Method of packaging a non-contact I/O signal transmission integrated circuit
US4912525A (en) * 1986-09-17 1990-03-27 Universal Photonix, Inc. Apparatus for transmitting optical signals into a protected environment
US4761680A (en) * 1986-09-29 1988-08-02 General Electric Company Photodetector
DE3732626A1 (de) * 1987-09-28 1989-04-06 Siemens Ag Photo-lasertransistor
US4821082A (en) * 1987-10-30 1989-04-11 International Business Machines Corporation Heterojunction bipolar transistor with substantially aligned energy levels
US5173795A (en) * 1989-03-28 1992-12-22 Motorola, Inc. Optically controlled radio
US4964693A (en) * 1989-03-28 1990-10-23 Motorola, Inc. Radio having optical controls and method of optically controlling same
JPH0397267A (ja) * 1989-09-11 1991-04-23 Mitsubishi Electric Corp ヘテロ接合アバランシェトランジスタ
US5541704A (en) * 1994-08-08 1996-07-30 Eastman Kodak Company Camera with LED photometer
FR2724769B1 (fr) * 1994-09-16 1996-12-06 Thomson Csf Procede de realisation de diodes laser a emission surfacique
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US20050040432A1 (en) * 2003-08-22 2005-02-24 The Board Of Trustees Of The University Of Illinois Light emitting device and method
US7354780B2 (en) * 2003-08-22 2008-04-08 The Board Of Trustees Of The University Of Illinois Semiconductor light emitting devices and methods
US7286583B2 (en) * 2003-08-22 2007-10-23 The Board Of Trustees Of The University Of Illinois Semiconductor laser devices and methods
US7696536B1 (en) * 2003-08-22 2010-04-13 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US7998807B2 (en) * 2003-08-22 2011-08-16 The Board Of Trustees Of The University Of Illinois Method for increasing the speed of a light emitting biopolar transistor device
US7091082B2 (en) 2003-08-22 2006-08-15 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US8154414B2 (en) * 2005-03-31 2012-04-10 Finisar Corporation Systems and methods for collecting data with sensors
US7859071B2 (en) * 2005-03-31 2010-12-28 Finisar Corporation Power and communication interface for sensors using a single tethered fiber
US7535034B2 (en) * 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
US7711015B2 (en) * 2007-04-02 2010-05-04 The Board Of Trustees Of The University Of Illinois Method for controlling operation of light emitting transistors and laser transistors
DE102016202386B3 (de) * 2016-02-17 2017-08-10 Siemens Aktiengesellschaft Spannungswandler mit einer Strommessvorrichtung
GB2569994B (en) * 2018-01-08 2020-07-15 Leonardo Mw Ltd A dual band photodiode element and method of making the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5229334A (en) * 1975-08-28 1977-03-05 Mabuchi Motor Co Ltd Battery-operated model toy equipped with radio control
JPS53116792A (en) * 1977-03-23 1978-10-12 Toshiba Corp Semiconductor light emitting-photo detecting composite device
JPS5448493A (en) * 1977-03-23 1979-04-17 Toshiba Corp Semiconductor optical device
FR2406896A1 (fr) * 1977-10-18 1979-05-18 Thomson Csf Diode emettrice et receptrice en lumiere notamment pour telecommunications optiques
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
JPS5598880A (en) * 1979-01-20 1980-07-28 Nec Corp Light transmitting/receiving semiconductor device
US4388633A (en) * 1980-09-29 1983-06-14 Hughes Aircraft Company Monolithic transistor coupled electroluminescent diode

Also Published As

Publication number Publication date
FR2493047B1 (enExample) 1982-11-26
EP0051505B1 (fr) 1983-04-13
DE3160184D1 (en) 1983-05-19
US4485391A (en) 1984-11-27
FR2493047A1 (fr) 1982-04-30
EP0051505A1 (fr) 1982-05-12

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