JPS5696798A - Epitaxial growth of liquid phase - Google Patents

Epitaxial growth of liquid phase

Info

Publication number
JPS5696798A
JPS5696798A JP17038079A JP17038079A JPS5696798A JP S5696798 A JPS5696798 A JP S5696798A JP 17038079 A JP17038079 A JP 17038079A JP 17038079 A JP17038079 A JP 17038079A JP S5696798 A JPS5696798 A JP S5696798A
Authority
JP
Japan
Prior art keywords
solution
epitaxial growth
liquid phase
hollow
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17038079A
Other languages
Japanese (ja)
Inventor
Saburo Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17038079A priority Critical patent/JPS5696798A/en
Publication of JPS5696798A publication Critical patent/JPS5696798A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To make all the packing materials miscible with each other to a solution, by putting a flat main ingredient in the well of a solution at a sliding part, placing other ingredients on it, followed by heating them.
CONSTITUTION: In preparing a solution for growth comprising a given composition, e.g., a solution of InGaAsP, first of all, In is molded into the flat small piece 11 with a hollow and put in the well 4 for a solution. The material 12 consisting of InP, GaAs, InAs, and a dopant in a given weight based on that of In is placed on the hollow of the flat small piece 11 of In and heated. By this procedure all the packing materials are dissolved into a solution. The use of this solution can form an epitaxial growth layer with a given composition.
COPYRIGHT: (C)1981,JPO&Japio
JP17038079A 1979-12-28 1979-12-28 Epitaxial growth of liquid phase Pending JPS5696798A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17038079A JPS5696798A (en) 1979-12-28 1979-12-28 Epitaxial growth of liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17038079A JPS5696798A (en) 1979-12-28 1979-12-28 Epitaxial growth of liquid phase

Publications (1)

Publication Number Publication Date
JPS5696798A true JPS5696798A (en) 1981-08-05

Family

ID=15903855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17038079A Pending JPS5696798A (en) 1979-12-28 1979-12-28 Epitaxial growth of liquid phase

Country Status (1)

Country Link
JP (1) JPS5696798A (en)

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