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Fujitsu Ltd
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Fujitsu Ltd
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Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP17038079ApriorityCriticalpatent/JPS5696798A/en
Publication of JPS5696798ApublicationCriticalpatent/JPS5696798A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: To make all the packing materials miscible with each other to a solution, by putting a flat main ingredient in the well of a solution at a sliding part, placing other ingredients on it, followed by heating them.
CONSTITUTION: In preparing a solution for growth comprising a given composition, e.g., a solution of InGaAsP, first of all, In is molded into the flat small piece 11 with a hollow and put in the well 4 for a solution. The material 12 consisting of InP, GaAs, InAs, and a dopant in a given weight based on that of In is placed on the hollow of the flat small piece 11 of In and heated. By this procedure all the packing materials are dissolved into a solution. The use of this solution can form an epitaxial growth layer with a given composition.
COPYRIGHT: (C)1981,JPO&Japio
JP17038079A1979-12-281979-12-28Epitaxial growth of liquid phase
PendingJPS5696798A
(en)
Compositions useful in the preparation of stabilized radiographic scanning agents, a method of preparing them and the use of stannous gentisilate as stabilizer in these compositions
METHOD FOR PREPARING HERBICIDE PREPARATIONS AND METHOD FOR PREPARING 1,2-DIMETHYL-3,5-DIPHENYLPYRAZOLIUM COMPOSITIONS SUITABLE FOR USE IN SUCH PREPARATIONS