JPS5684450A - Manufacture of noncrystalline alloy thin strip of small alternate current loss - Google Patents
Manufacture of noncrystalline alloy thin strip of small alternate current lossInfo
- Publication number
- JPS5684450A JPS5684450A JP16088679A JP16088679A JPS5684450A JP S5684450 A JPS5684450 A JP S5684450A JP 16088679 A JP16088679 A JP 16088679A JP 16088679 A JP16088679 A JP 16088679A JP S5684450 A JPS5684450 A JP S5684450A
- Authority
- JP
- Japan
- Prior art keywords
- thin strip
- magnetic
- magnetic field
- current loss
- alloy thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16088679A JPS5684450A (en) | 1979-12-13 | 1979-12-13 | Manufacture of noncrystalline alloy thin strip of small alternate current loss |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16088679A JPS5684450A (en) | 1979-12-13 | 1979-12-13 | Manufacture of noncrystalline alloy thin strip of small alternate current loss |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9047684A Division JPS59211530A (ja) | 1984-05-07 | 1984-05-07 | 交流損失の小さいFe−Co−Si−B系非晶質合金薄帯の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5684450A true JPS5684450A (en) | 1981-07-09 |
| JPH0151540B2 JPH0151540B2 (cs) | 1989-11-06 |
Family
ID=15724484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16088679A Granted JPS5684450A (en) | 1979-12-13 | 1979-12-13 | Manufacture of noncrystalline alloy thin strip of small alternate current loss |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5684450A (cs) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62276810A (ja) * | 1986-02-24 | 1987-12-01 | Toshiba Corp | 高透磁率磁心の製造方法 |
| CN113652616A (zh) * | 2021-07-01 | 2021-11-16 | 中国电子科技集团公司第九研究所 | 一种高性能软磁非晶涂层及其制备方法 |
| CN113755713A (zh) * | 2020-07-17 | 2021-12-07 | 英迪那米(徐州)半导体科技有限公司 | 一种三氧化二钇弥散强化铜合金的制备方法 |
-
1979
- 1979-12-13 JP JP16088679A patent/JPS5684450A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62276810A (ja) * | 1986-02-24 | 1987-12-01 | Toshiba Corp | 高透磁率磁心の製造方法 |
| CN113755713A (zh) * | 2020-07-17 | 2021-12-07 | 英迪那米(徐州)半导体科技有限公司 | 一种三氧化二钇弥散强化铜合金的制备方法 |
| CN113652616A (zh) * | 2021-07-01 | 2021-11-16 | 中国电子科技集团公司第九研究所 | 一种高性能软磁非晶涂层及其制备方法 |
| CN113652616B (zh) * | 2021-07-01 | 2022-08-09 | 中国电子科技集团公司第九研究所 | 一种高性能软磁非晶涂层及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0151540B2 (cs) | 1989-11-06 |
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