JPS5683026A - Metallizing treatment for semiconductor device - Google Patents

Metallizing treatment for semiconductor device

Info

Publication number
JPS5683026A
JPS5683026A JP15675180A JP15675180A JPS5683026A JP S5683026 A JPS5683026 A JP S5683026A JP 15675180 A JP15675180 A JP 15675180A JP 15675180 A JP15675180 A JP 15675180A JP S5683026 A JPS5683026 A JP S5683026A
Authority
JP
Japan
Prior art keywords
semiconductor device
metallizing treatment
metallizing
treatment
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15675180A
Other languages
English (en)
Japanese (ja)
Inventor
Oogasuto Haabaato Hei Rudorufu
Kaaru Sutaan Ronarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB7938793A external-priority patent/GB2038883B/en
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS5683026A publication Critical patent/JPS5683026A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP15675180A 1979-11-08 1980-11-07 Metallizing treatment for semiconductor device Pending JPS5683026A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7938793A GB2038883B (en) 1978-11-09 1979-11-08 Metallizing semiconductor devices

Publications (1)

Publication Number Publication Date
JPS5683026A true JPS5683026A (en) 1981-07-07

Family

ID=10509073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15675180A Pending JPS5683026A (en) 1979-11-08 1980-11-07 Metallizing treatment for semiconductor device

Country Status (3)

Country Link
JP (1) JPS5683026A (de)
DE (1) DE3040693A1 (de)
FR (1) FR2469467B1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
JPS62105422A (ja) * 1985-11-01 1987-05-15 Hitachi Ltd 半導体装置の製造方法
JPS62239526A (ja) * 1986-04-11 1987-10-20 Fujitsu Ltd 金属被膜のエピタキシヤル成長方法
JPS6451620A (en) * 1987-08-24 1989-02-27 Fujitsu Ltd Vapor growth method
JPH02113530A (ja) * 1988-09-09 1990-04-25 Philips Gloeilampenfab:Nv 半導体素子の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4488506A (en) * 1981-06-18 1984-12-18 Itt Industries, Inc. Metallization plant
DE3141567C2 (de) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten
DE3142586A1 (de) * 1981-10-27 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Vorrichtung fuer die hochtemperaturbehandlung von aus silizium, metall und metall/silizium bestehenden, auf substraten aufgebrachten schichten in extrem trockener gasatmosphaere
EP0082627B1 (de) * 1981-12-14 1988-01-27 United Kingdom Atomic Energy Authority Strömungsdurchlässiges, poröses, elektrisches Heizelement
DE3211752C2 (de) * 1982-03-30 1985-09-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2772985A (en) * 1951-08-08 1956-12-04 Thompson Prod Inc Coating of molybdenum with binary coatings containing aluminum
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
DE2025779C3 (de) * 1970-05-26 1980-11-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si
GB2041983B (en) * 1978-11-09 1982-12-01 Standard Telephones Cables Ltd Metallising semiconductor devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
JPS62105422A (ja) * 1985-11-01 1987-05-15 Hitachi Ltd 半導体装置の製造方法
JPS62239526A (ja) * 1986-04-11 1987-10-20 Fujitsu Ltd 金属被膜のエピタキシヤル成長方法
JPS6451620A (en) * 1987-08-24 1989-02-27 Fujitsu Ltd Vapor growth method
JPH02113530A (ja) * 1988-09-09 1990-04-25 Philips Gloeilampenfab:Nv 半導体素子の製造方法

Also Published As

Publication number Publication date
FR2469467B1 (fr) 1985-06-28
DE3040693A1 (de) 1981-05-27
FR2469467A1 (fr) 1981-05-22

Similar Documents

Publication Publication Date Title
JPS55118651A (en) Semiconductor device
JPS55133562A (en) Semiconductor device
JPS5637680A (en) Semiconductor device
EP0023782A3 (en) Semiconductor device
JPS5666250A (en) Treating device for secretion
JPS567466A (en) Selffalignment semiconductor device
JPS55140272A (en) Semiconductor device
JPS567450A (en) Semiconductor device
JPS55103865A (en) Device for treating blood plasma
JPS567465A (en) Semiconductor device
DE3067917D1 (en) Constructional arrangement for semiconductor devices
JPS5687395A (en) Semiconductor device
DE3071242D1 (en) Semiconductor device
JPS5666049A (en) Semiconductor device
JPS55162248A (en) Semiconductor device
JPS5683026A (en) Metallizing treatment for semiconductor device
GB2061001B (en) Semiconductor device
GB2043343B (en) Semiconductor device
JPS5676581A (en) Semiconductor device
DE3066946D1 (en) Semiconductor master-slice device
DE3071877D1 (en) Semiconductor device
GB2040567B (en) Gate controlled semiconductor device
JPS5666050A (en) Semiconductor device
GB2046992B (en) Semiconductor device
JPS5681928A (en) Semiconductor annealing treatment