JPS5675650A - Photomask material for far ultraviolet exposure - Google Patents

Photomask material for far ultraviolet exposure

Info

Publication number
JPS5675650A
JPS5675650A JP15210779A JP15210779A JPS5675650A JP S5675650 A JPS5675650 A JP S5675650A JP 15210779 A JP15210779 A JP 15210779A JP 15210779 A JP15210779 A JP 15210779A JP S5675650 A JPS5675650 A JP S5675650A
Authority
JP
Japan
Prior art keywords
far ultraviolet
layer
photomask
film thickness
reflectance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15210779A
Other languages
Japanese (ja)
Inventor
Takashi Hatano
Akira Maruyama
Keiko Hioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP15210779A priority Critical patent/JPS5675650A/en
Publication of JPS5675650A publication Critical patent/JPS5675650A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Abstract

PURPOSE:To obtain a photomask material low in reflectance of far ultraviolet rays and high in resolution, for use in fabrication of high density integrated circuits or the like, by forming a metallic Cr layer and a Cr oxide layer each in a specified film thickness range on a transparent synthetic quartz substrate. CONSTITUTION:A metallic Cr layer is formed on a synthetic quartz substrate having 180-260nm spectral transmittance >=90% in 50-70nm film thickness, and a Cr oxide layer of 5-8nm film thickness is formed on the Cr layer so as to reduce its spectral reflectance of the far ultraviolet rays in the region of 180-260nm wavelength to a minimal value <=5%, thus permitting a material for fabricating a photomask capable of forming a minute pattern of about 1mum size by far ultraviolet exposure to be obtained. Reduction of reflectance permits the light reflected by the Cr oxide layer to be prevented from exposing the photoresist again, and from disabling transfer of minute patterns, and therefore, a high resolution photomask to be obtained.
JP15210779A 1979-11-26 1979-11-26 Photomask material for far ultraviolet exposure Pending JPS5675650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15210779A JPS5675650A (en) 1979-11-26 1979-11-26 Photomask material for far ultraviolet exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15210779A JPS5675650A (en) 1979-11-26 1979-11-26 Photomask material for far ultraviolet exposure

Publications (1)

Publication Number Publication Date
JPS5675650A true JPS5675650A (en) 1981-06-22

Family

ID=15533198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15210779A Pending JPS5675650A (en) 1979-11-26 1979-11-26 Photomask material for far ultraviolet exposure

Country Status (1)

Country Link
JP (1) JPS5675650A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7949220B2 (en) * 2006-07-20 2011-05-24 Hitachi Chemical Company, Ltd. Hybrid optical/electrical mixed circuit board

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121441A (en) * 1979-03-14 1980-09-18 Fujitsu Ltd Mask for far ultraviolet exposure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121441A (en) * 1979-03-14 1980-09-18 Fujitsu Ltd Mask for far ultraviolet exposure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7949220B2 (en) * 2006-07-20 2011-05-24 Hitachi Chemical Company, Ltd. Hybrid optical/electrical mixed circuit board

Similar Documents

Publication Publication Date Title
JPS6267547A (en) Photomask
JPH06175347A (en) Photomask and pattern forming method using the same
JPS57172735A (en) Multilayer photoresist processing
JPS57104141A (en) Photomask and photomask substrate
US6162568A (en) Process for forming features on a semiconductor wafer using a phase shifting mask that can be used with two different wavelengths of light
JPS5630129A (en) Manufacture of photomask
JPH04162039A (en) Photomask
JPS5675650A (en) Photomask material for far ultraviolet exposure
GB1210140A (en) Improvements in or relating to contact exposure masks for photoresist layers
JPS5595324A (en) Manufacturing method of semiconductor device
JP2002189283A (en) Phase shift mask blank, phase shift mask and method for producing phase shift mask
US5798192A (en) Structure of a mask for use in a lithography process of a semiconductor fabrication
JPH1184624A (en) Blank for halftone type phase shift mask, halftone type phase shift mask and their production
US5976732A (en) Photomask for reconfiguring a circuit by exposure at two different wavelengths
JPS5680133A (en) Formation of pattern
JPS5596952A (en) Production of photomask
JPS56125744A (en) Photomask substrate with transparent conductive film
JPS59135468A (en) Exposing mask
JPH04223464A (en) Photomask and its manufacture
KR0119372B1 (en) Phase shift mask
KR20000001790A (en) Mask structure for improving a resolution of patterns
JPS55163539A (en) Photo mask
KR0138720B1 (en) Half-tone phase shift mask and making method thereof
JPS5655046A (en) Formation of resist pattern
JPS5619623A (en) Photomask