JPS5667974A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS5667974A
JPS5667974A JP10518380A JP10518380A JPS5667974A JP S5667974 A JPS5667974 A JP S5667974A JP 10518380 A JP10518380 A JP 10518380A JP 10518380 A JP10518380 A JP 10518380A JP S5667974 A JPS5667974 A JP S5667974A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacturing semiconductor
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10518380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6318348B2 (en:Method
Inventor
Jiyon Hoburu Harorudo
Makufuaasun Utsudooru Jierii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5667974A publication Critical patent/JPS5667974A/ja
Publication of JPS6318348B2 publication Critical patent/JPS6318348B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D64/0116—
    • H10D64/0124—
    • H10D64/0125—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10518380A 1979-10-26 1980-08-01 Method of manufacturing semiconductor device Granted JPS5667974A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8871879A 1979-10-26 1979-10-26

Publications (2)

Publication Number Publication Date
JPS5667974A true JPS5667974A (en) 1981-06-08
JPS6318348B2 JPS6318348B2 (en:Method) 1988-04-18

Family

ID=22213035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10518380A Granted JPS5667974A (en) 1979-10-26 1980-08-01 Method of manufacturing semiconductor device

Country Status (4)

Country Link
EP (1) EP0027903B1 (en:Method)
JP (1) JPS5667974A (en:Method)
CA (1) CA1155970A (en:Method)
DE (1) DE3064833D1 (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220376A (ja) * 1985-03-26 1986-09-30 Sumitomo Electric Ind Ltd ショットキゲート電界効果トランジスタの製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3005733A1 (de) * 1980-02-15 1981-08-20 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte halbleiteranordnung
JPH031547A (ja) * 1989-05-29 1991-01-08 Mitsubishi Electric Corp 化合物半導体ｍｉｓ・ｆｅｔおよびその製造方法
JPH0393243U (en:Method) * 1990-01-16 1991-09-24
KR102754512B1 (ko) * 2021-01-22 2025-01-13 한화솔루션 주식회사 친환경 가소제 조성물, 및 이를 포함하는 실란트/접착제 조성물

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA921175A (en) * 1970-07-10 1973-02-13 Westinghouse Electric Corporation Microwave schottky barrier field effect transistor and method of preparation
US3855690A (en) * 1972-12-26 1974-12-24 Westinghouse Electric Corp Application of facet-growth to self-aligned schottky barrier gate field effect transistors
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
US4077111A (en) * 1976-07-14 1978-03-07 Westinghouse Electric Corporation Self-aligned gate field effect transistor and method for making same
GB1574525A (en) * 1977-04-13 1980-09-10 Philips Electronic Associated Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method
US4268952A (en) * 1979-04-09 1981-05-26 International Business Machines Corporation Method for fabricating self-aligned high resolution non planar devices employing low resolution registration

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220376A (ja) * 1985-03-26 1986-09-30 Sumitomo Electric Ind Ltd ショットキゲート電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
EP0027903B1 (en) 1983-09-14
EP0027903A1 (en) 1981-05-06
CA1155970A (en) 1983-10-25
DE3064833D1 (en) 1983-10-20
JPS6318348B2 (en:Method) 1988-04-18

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