JPS5660074A - Variable resistor - Google Patents
Variable resistorInfo
- Publication number
- JPS5660074A JPS5660074A JP13550179A JP13550179A JPS5660074A JP S5660074 A JPS5660074 A JP S5660074A JP 13550179 A JP13550179 A JP 13550179A JP 13550179 A JP13550179 A JP 13550179A JP S5660074 A JPS5660074 A JP S5660074A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- potential
- switch
- impedances
- shifted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Adjustable Resistors (AREA)
Abstract
PURPOSE:To obtain the variable resistor which is not affected by temperature and is insulated at the input and output by negative feeding back the output of the first photodetecting element to an amplifier to which an integrating voltage for irradiating a photo coupler having one light emitting element and first and second photodetecting elements is inputted. CONSTITUTION:When the switching contact (a) of a switch S1 is shifted to a contact (d), a light emitting diode LED irradiates a light, the first phototransistor PT1 is turned on so that the potential at the point (d) becomes 0 volt and the impedances of the phototransistors PT1, PT2 become zero ohm. When the switch S1 is shifted to the contact (c), the integrating circuit of a resistor R1, a capacitor C and an operational amplifier 1 integrates the voltage -V of the power source, the potential at the contact (c) is raised, and the potential when the switch S1 is opened is held. Since the potential at the contact (c) of the operational amplifier 2 is equal to the potential of the contact (d), the impedances of the transistors PT1, PT2 become Vc/I, where the potential of the contact (c) is represented by Vc and the current of the constant-current source 4 is represented by I.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13550179A JPS5660074A (en) | 1979-10-20 | 1979-10-20 | Variable resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13550179A JPS5660074A (en) | 1979-10-20 | 1979-10-20 | Variable resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5660074A true JPS5660074A (en) | 1981-05-23 |
Family
ID=15153221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13550179A Pending JPS5660074A (en) | 1979-10-20 | 1979-10-20 | Variable resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5660074A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5294089A (en) * | 1976-02-02 | 1977-08-08 | Nec Corp | Optically coupled semi-conductor element |
JPS52141585A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Variable resistor |
-
1979
- 1979-10-20 JP JP13550179A patent/JPS5660074A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5294089A (en) * | 1976-02-02 | 1977-08-08 | Nec Corp | Optically coupled semi-conductor element |
JPS52141585A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Variable resistor |
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