JPS5656627A - Ion implanter - Google Patents

Ion implanter

Info

Publication number
JPS5656627A
JPS5656627A JP13193079A JP13193079A JPS5656627A JP S5656627 A JPS5656627 A JP S5656627A JP 13193079 A JP13193079 A JP 13193079A JP 13193079 A JP13193079 A JP 13193079A JP S5656627 A JPS5656627 A JP S5656627A
Authority
JP
Japan
Prior art keywords
disk
pulse motor
wafer
miniaturized
rotated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13193079A
Other languages
Japanese (ja)
Inventor
Katsunobu Abe
Takeshi Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13193079A priority Critical patent/JPS5656627A/en
Publication of JPS5656627A publication Critical patent/JPS5656627A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To obtain the ion implanter miniaturized with high reliability by a method wherein a motor to drive a disk on which a wafer is installed is arranged outside a device through vacuum seal and coupled to a mechanical scanner through a spline mechanism. CONSTITUTION:A wafer 33 is locked on disks 30, 31, and the disk 30 is rotated by a pulse motor 44. Ion beam 3A of the objective matter is projected into a chamber 8A, the disk 30 is moved vertically by a pulse motor 60, and thus the ion beam 3A is implanted uniformly in the wafer 33 by said rotation and vertical move of the disk. Next, the disk 31 is rotated by a pulse motor 45 and stopped when a through hole of the disk 30 comes to a position whereat the beam 3A is incident by controlling the pulse motor 44, and then the beam 3A is implanted uniformly through the hole by said rotation and vertical move alike. The motors 44, 45, 60 are installed in the chamber 8A through rotating vacuum seals 48, 49, 62 and coupled to driving means 30A, 31A with spline mechanisms 50, 51. A continuous operation is ready by two plates 30, 31 and the device is miniaturized and high in reliability.
JP13193079A 1979-10-15 1979-10-15 Ion implanter Pending JPS5656627A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13193079A JPS5656627A (en) 1979-10-15 1979-10-15 Ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13193079A JPS5656627A (en) 1979-10-15 1979-10-15 Ion implanter

Publications (1)

Publication Number Publication Date
JPS5656627A true JPS5656627A (en) 1981-05-18

Family

ID=15069524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13193079A Pending JPS5656627A (en) 1979-10-15 1979-10-15 Ion implanter

Country Status (1)

Country Link
JP (1) JPS5656627A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4598231B2 (en) * 1999-04-19 2010-12-15 アプライド マテリアルズ インコーポレイテッド Ion implanter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4598231B2 (en) * 1999-04-19 2010-12-15 アプライド マテリアルズ インコーポレイテッド Ion implanter

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