JPS5651853A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5651853A
JPS5651853A JP12727679A JP12727679A JPS5651853A JP S5651853 A JPS5651853 A JP S5651853A JP 12727679 A JP12727679 A JP 12727679A JP 12727679 A JP12727679 A JP 12727679A JP S5651853 A JPS5651853 A JP S5651853A
Authority
JP
Japan
Prior art keywords
poly
layer
small
fet
current passage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12727679A
Other languages
Japanese (ja)
Other versions
JPS6318339B2 (en
Inventor
Shoji Ariizumi
Makoto Segawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12727679A priority Critical patent/JPS5651853A/en
Priority to US06/187,794 priority patent/US4453175A/en
Priority to EP80105584A priority patent/EP0029099A3/en
Publication of JPS5651853A publication Critical patent/JPS5651853A/en
Priority to US07/111,136 priority patent/US4907057A/en
Publication of JPS6318339B2 publication Critical patent/JPS6318339B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a high-integration resistor-on FET, by providing a high-resistance poly Si layer in an insulation gate-type FET through an insulation film and using an FET-contained current passage and a poly Si layer as a current passage of a separate system. CONSTITUTION:Four blocks of a memory cell are arranged symmetrically to the center point C. Poly Si insulation gate-type FETQ1-Q16 are prepared in the blocks. Large-capacity drivers Q1, Q2 and Q5, Q6..., which constitute an FF circuit, are arranged to face each other in a hatchetlike configuration so that an occupancy area can be reduced. Q3, Q4... for switching use are to be of small type and small capacity, and dispersion capacities of all FETs are to be made extremely small. A high- resistance section is partly provided by covering with the second poly Si layer, a separate-system current passage is provided on the driver, load resistance R1 of Q2 is arranged on Q1, and R1 is arranged on Q2. Others are processed in the same manner. For this reason, the FF conducts stable operation. Data lines D, grounding lines VSS, word lines W and power source lines VDD are all manufactured at the same time by the second poly Si layer. It is possible, by using this constitution, to form a static RAM of small occupancy area.
JP12727679A 1979-09-19 1979-10-04 Semiconductor device Granted JPS5651853A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP12727679A JPS5651853A (en) 1979-10-04 1979-10-04 Semiconductor device
US06/187,794 US4453175A (en) 1979-09-19 1980-09-16 MOS Static RAM layout with polysilicon resistors over FET gates
EP80105584A EP0029099A3 (en) 1979-09-19 1980-09-17 Semiconductor memory device
US07/111,136 US4907057A (en) 1979-09-19 1987-10-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12727679A JPS5651853A (en) 1979-10-04 1979-10-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5651853A true JPS5651853A (en) 1981-05-09
JPS6318339B2 JPS6318339B2 (en) 1988-04-18

Family

ID=14955971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12727679A Granted JPS5651853A (en) 1979-09-19 1979-10-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5651853A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827357A (en) * 1981-08-12 1983-02-18 Hitachi Ltd Semiconductor memory
JPS594160A (en) * 1982-06-21 1984-01-10 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Static ram cell
JPS6178528A (en) * 1984-09-27 1986-04-22 Nissan Motor Co Ltd Forging forming method of connecting rod cap
JPS61168955A (en) * 1985-01-22 1986-07-30 Nec Corp Semiconductor device
JPS61216461A (en) * 1985-03-22 1986-09-26 Fujitsu Ltd Semiconductor memory cell
US5087239A (en) * 1982-12-23 1992-02-11 Tampax Limited Tampon applicator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53148398A (en) * 1977-05-31 1978-12-23 Texas Instruments Inc Mos ic device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53148398A (en) * 1977-05-31 1978-12-23 Texas Instruments Inc Mos ic device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827357A (en) * 1981-08-12 1983-02-18 Hitachi Ltd Semiconductor memory
JPS594160A (en) * 1982-06-21 1984-01-10 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Static ram cell
JPH0436468B2 (en) * 1982-06-21 1992-06-16 Fueachairudo Kamera Endo Insutsurumento Corp
US5087239A (en) * 1982-12-23 1992-02-11 Tampax Limited Tampon applicator
JPS6178528A (en) * 1984-09-27 1986-04-22 Nissan Motor Co Ltd Forging forming method of connecting rod cap
JPH0218658B2 (en) * 1984-09-27 1990-04-26 Nissan Motor
JPS61168955A (en) * 1985-01-22 1986-07-30 Nec Corp Semiconductor device
JPS61216461A (en) * 1985-03-22 1986-09-26 Fujitsu Ltd Semiconductor memory cell

Also Published As

Publication number Publication date
JPS6318339B2 (en) 1988-04-18

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