JPS56501509A - - Google Patents
Info
- Publication number
- JPS56501509A JPS56501509A JP50015780A JP50015780A JPS56501509A JP S56501509 A JPS56501509 A JP S56501509A JP 50015780 A JP50015780 A JP 50015780A JP 50015780 A JP50015780 A JP 50015780A JP S56501509 A JPS56501509 A JP S56501509A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9412179A | 1979-11-14 | 1979-11-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56501509A true JPS56501509A (de) | 1981-10-15 |
Family
ID=22243186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50015780A Pending JPS56501509A (de) | 1979-11-14 | 1980-11-12 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0039736A4 (de) |
JP (1) | JPS56501509A (de) |
WO (1) | WO1981001485A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049520A (en) * | 1990-06-06 | 1991-09-17 | Micron Technology, Inc. | Method of partially eliminating the bird's beak effect without adding any process steps |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1390135A (en) * | 1971-05-08 | 1975-04-09 | Matsushita Electric Ind Co Ltd | Insulated gate semiconductor device |
JPS5222480A (en) * | 1975-08-14 | 1977-02-19 | Nippon Telegr & Teleph Corp <Ntt> | Insulating gate field effect transistor |
US4033026A (en) * | 1975-12-16 | 1977-07-05 | Intel Corporation | High density/high speed MOS process and device |
GB1575741A (en) * | 1977-01-17 | 1980-09-24 | Philips Electronic Associated | Integrated circuits |
DE2911726C2 (de) * | 1978-03-27 | 1985-08-01 | Ncr Corp., Dayton, Ohio | Verfahren zur Herstellung eines Feldeffekttransistors |
US4212683A (en) * | 1978-03-27 | 1980-07-15 | Ncr Corporation | Method for making narrow channel FET |
US4229755A (en) * | 1978-08-15 | 1980-10-21 | Rockwell International Corporation | Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements |
-
1980
- 1980-11-12 WO PCT/US1980/001523 patent/WO1981001485A1/en not_active Application Discontinuation
- 1980-11-12 JP JP50015780A patent/JPS56501509A/ja active Pending
- 1980-11-12 EP EP19800902383 patent/EP0039736A4/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
EP0039736A1 (de) | 1981-11-18 |
EP0039736A4 (de) | 1983-04-06 |
WO1981001485A1 (en) | 1981-05-28 |