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Filing date
Publication date
Application filedfiledCritical
Priority to JP4547780ApriorityCriticalpatent/JPS55146964A/ja
Publication of JPS55146964ApublicationCriticalpatent/JPS55146964A/ja
Publication of JPS5643615B2publicationCriticalpatent/JPS5643615B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
H10D84/65—Integrated injection logic
H10D84/658—Integrated injection logic integrated in combination with analog structures
Landscapes
Bipolar Integrated Circuits
(AREA)
Bipolar Transistors
(AREA)
Element Separation
(AREA)
JP4547780A1980-04-071980-04-07Manufacture of semiconductor device
GrantedJPS55146964A
(en)